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MC74LCX541_05 데이터시트(Datasheet) 4 Page - ON Semiconductor

부품명 MC74LCX541_05
상세내용  Low-Voltage CMOS Octal Buffer Flow Through Pinout With 5 V−Tolerant Inputs and Outputs (3−State, Non−Inverting)
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제조사  ONSEMI [ON Semiconductor]
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MC74LCX541
http://onsemi.com
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DC ELECTRICAL CHARACTERISTICS
TA = −40°C to +85°C
Symbol
Characteristic
Condition
Min
Max
Unit
VIH
HIGH Level Input Voltage (Note 2)
2.7 V
≤ VCC ≤ 3.6 V
2.0
V
VIL
LOW Level Input Voltage (Note 2)
2.7 V
≤ VCC ≤ 3.6 V
0.8
V
VOH
HIGH Level Output Voltage
2.7 V
≤ VCC ≤ 3.6 V; IOH = −100 mA
VCC − 0.2
V
VCC = 2.7 V; IOH = −12 mA
2.2
VCC = 3.0 V; IOH = −18 mA
2.4
VCC = 3.0 V; IOH = −24 mA
2.2
VOL
LOW Level Output Voltage
2.7 V
≤ VCC ≤ 3.6 V; IOL = 100 mA
0.2
V
VCC = 2.7 V; IOL= 12 mA
0.4
VCC = 3.0 V; IOL = 16 mA
0.4
VCC = 3.0 V; IOL = 24 mA
0.55
II
Input Leakage Current
2.7 V
≤ VCC ≤ 3.6 V; 0 V ≤ VI ≤ 5.5 V
±5.0
mA
IOZ
3−State Output Current
2.7
≤ VCC ≤ 3.6 V; 0 V ≤ VO ≤ 5.5 V;
VI = VIH or V IL
±5.0
mA
IOFF
Power−Off Leakage Current
VCC = 0 V; VI or VO = 5.5 V
10
mA
ICC
Quiescent Supply Current
2.7
≤ VCC ≤ 3.6 V; VI = GND or VCC
10
mA
CC
y
2.7
≤ VCC ≤ 3.6 V; 3.6 ≤ VI or VO ≤ 5.5 V
±10
mA
DICC
Increase in ICC per Input
2.7
≤ VCC ≤ 3.6 V; VIH = VCC − 0.6 V
500
mA
2. These values of VI are used to test DC electrical characteristics only.
AC ELECTRICAL CHARACTERISTICS (tR = tF = 2.5 ns; CL = 50 pF; RL = 500 W)
Limits
TA = −40°C to +85°C
VCC = 3.0 V to 3.6 V
VCC = 2.7 V
Symbol
Parameter
Waveform
Min
Max
Max
Unit
tPLH
tPHL
Propagation Delay
Input to Output
1
1.5
1.5
6.5
6.5
7.5
7.5
ns
tPZH
tPZL
Output Enable Time to
High and Low Level
2
1.5
1.5
8.5
8.5
9.5
9.5
ns
tPHZ
tPLZ
Output Disable Time From
High and Low Level
2
1.5
1.5
7.5
7.5
8.5
8.5
ns
tOSHL
tOSLH
Output−to−Output Skew (Note 3)
1.0
1.0
ns
3. Skew is defined as the absolute value of the difference between the actual propagation delay for any two separate outputs of the same device.
The specification applies to any outputs switching in the same direction, either HIGH−to−LOW (tOSHL) or LOW−to−HIGH (tOSLH); parameter
guaranteed by design.
DYNAMIC SWITCHING CHARACTERISTICS
TA = +25°C
Symbol
Characteristic
Condition
Min
Typ
Max
Unit
VOLP
Dynamic LOW Peak Voltage (Note 4)
VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V
0.8
V
VOLV
Dynamic LOW Valley Voltage (Note 4)
VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V
0.8
V
4. Number of outputs defined as “n”. Measured with “n−1” outputs switching from HIGH−to−LOW or LOW−to−HIGH. The remaining output is
measured in the LOW state.
CAPACITIVE CHARACTERISTICS
Symbol
Parameter
Condition
Typical
Unit
CIN
Input Capacitance
VCC = 3.3 V, VI = 0 V or VCC
7
pF
COUT
Output Capacitance
VCC = 3.3 V, VI = 0 V or VCC
8
pF
CPD
Power Dissipation Capacitance
10 MHz, VCC = 3.3 V, VI = 0 V or VCC
25
pF




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