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2SC2655-O-T9N-K 데이터시트(PDF) 2 Page - Unisonic Technologies |
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2SC2655-O-T9N-K 데이터시트(HTML) 2 Page - Unisonic Technologies |
2 / 4 page 2SC2655 NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R211-013,C ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETER SYMBOL RATING UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current Ic 2 A Collector Current(Pulse) Icp* 3 A Base Current IB 0.5 A Collector Power Dissipation Pc 900 mW Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Note: * PW 16ms, ≦ Duty Cycle 50%. ≦ 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector Emitter Breakdown Voltage BVCEO IC= 10mA, IB= 0 50 V Collector Cut-off Current ICBO VCB=50V, IE= 0 1.0 µA Emitter Cut-off Current IEBO VEB= 5V, IC=0 1.0 µA hFE(1) VCE=2V, Ic=0.5A 70 240 DC Current Gain hFE(2) VCE=2V, Ic=1.5A 40 Collector-Emitter Saturation Voltage VCE(SAT) IC=1A, IB=0.05A 0.5 V Base- Emitter Saturation Voltage VBE(SAT) IC=1A, IB=0.05A 1.2 V Transition Frequency fT VCE=2V, IC=0.5A 100 MHz Collector Output Capacitance Cob VCB= 10V, IE= 0, f=1MHz 30 pF Switching Time(Turn-on Time) tON IB1 IB2 20μs INPUT OUTPUT IB1 IB2 Vcc=30 V IB1= -IB2=0.05A DUTY CYCLE≦1% 0.1 µS CLASSIFICATION OF hFE(1) RANK O Y RANGE 70-140 120-240 |
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