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2SD468 데이터시트(Datasheet) 1 Page - Unisonic Technologies

부품명 2SD468
상세내용  LOW FREQUENCY POWER AMPLIFIER
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제조사  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
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UTC2SD468
NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD
1
QW-R201-050,A
LOW FREQUENCY POWER
AMPLIFIER
FEATURES
*Low frequency power amplifier
*Complement to 2SB562
TO-92
1
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
25
V
Collector-Emitter Voltage
VCEO
20
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
Ic
1
A
Collector Peak Current
Ic(peak)
1.5
A
Collector Power Dissipation
PC
0.9
W
Junction Temperature
Tj
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector to base breakdown voltage
V(BR)CBO
Ic=10
µA, IE=0
25
V
Collector to emitter breakdown
voltage
V(BR)CEO
Ic=1mA, RBE=
20
V
Emitter to base breakdown voltage
V(BR)EBO
IE=10
µA, IC=0
5
V
Collector Cut-Off Current
ICBO
VCB=20V, IE=0
1
µA
DC Current transfer ratio
hFE
VCE=2V, Ic=0.5A (note)
85
240
Collector to emitter saturation
voltage
VCE(sat)
Ic=0.8A, IB=0.08A (note)
0.2
0.5
V
Base to emitter voltage
VBE
VCE=2V, Ic=0.5A (note)
0.79
1
V
Gain bandwidth product
fT
VCE=2V, Ic=0.5A (note)
190
MHz
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
22
pF
Note: Pulse test




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