전자부품 데이터시트 검색엔진 |
|
STB11NM60T4 데이터시트(PDF) 3 Page - STMicroelectronics |
|
STB11NM60T4 데이터시트(HTML) 3 Page - STMicroelectronics |
3 / 16 page STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1 Electrical ratings 3/16 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit TO-220/D²PAK/I²PAK TO-220FP VGS Gate- source voltage ±30 V ID Drain current (continuous) at TC = 25°C 11 11(1) 1. Limited only by maximum temperature allowed A ID Drain current (continuous) at TC=100°C 7 7(1) A IDM (2) 2. Pulse width limited by safe operating area Drain current (pulsed) 44 44(1) A PTOT Total dissipation at TC = 25°C 160 35 W Derating Factor 1.28 0.28 W/°C dv/dt(3) 3. ISD ≤ 11A, di/dt ≤ 400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. Peak diode recovery voltage slope 15 V/ns VISO Insulation withstand voltage (DC) -- 2500 V TJ Operating junction temperature -65 to 150 °C Tstg Storage temperature 150 °C Table 2. Thermal data Symbol Parameter Value Unit TO-220/D²PAK/I²PAK TO-220FP Rthj-case Thermal resistance junction-case Max 0.78 3.57 °C/W Rthj-a Thermal resistance junction-ambient Max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C Table 3. Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) 5.5 A EAS Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=50V) 350 mJ |
유사한 부품 번호 - STB11NM60T4 |
|
유사한 설명 - STB11NM60T4 |
|
|
링크 URL |
개인정보취급방침 |
ALLDATASHEET.CO.KR |
ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |