UTC BCP68

NPN EPITAXIAL SILICON TRANSISTOR

2

QW-R207-008,B

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

100

nA

Collector Cut-off Current

10

µA

Emitter Cut-off Current

100

nA

50

85

375

DC Current Gain

60

DC Current Gain (BCP68-25)

160

375

Collector-Emitter Saturation Voltage

500

mV

620

mV

Base-Emitter Voltage

1

V

Collector Capacitance

38

pF

Transition Frequency

40

MHz

DC current gain ratio of the

complementary pairs

1.6

0

300

200

150

100

1

10

DC current gain (typical values)

250

50

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.