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MC74VHCT50AD 데이터시트(PDF) 2 Page - ON Semiconductor |
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2 / 7 page MC74VHCT50A http://onsemi.com 2 MAXIMUM RATINGS Symbol Parameter Value Unit VCC DC Supply Voltage *0.5 to )7.0 V VIN DC Input Voltage *0.5 v VI v )7.0 V VOUT DC Output Voltage Output in HIGH or LOW State (Note 1) *0.5 v VO v )7.0 V IIK DC Input Diode Current *20 mA IOK DC Output Diode Current $20 mA IO DC Output Source/Sink Current $25 mA ICC DC Supply Current per Supply Pin $50 mA IGND DC Ground Current per Ground Pin $50 mA TSTG Storage Temperature Range *65 to )150 _C TL Lead Temperature, 1 mm from Case for 10 Seconds 260 _C TJ Junction Temperature under Bias )150 _C qJA Thermal Resistance SOIC TSSOP 125 170 _C/W PD Power Dissipation in Still Air SOIC TSSOP 500 450 mW VESD ESD Withstand Voltage Human Body Model (Note 2) Machine Model (Note 3) Charged Device Model (Note 4) > 2000 > 200 2000 V ILatch−Up Latch−Up Performance Above VCC and Below GND at 85_C (Note 5) $300 mA Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. IO absolute maximum rating must be observed. 2. Tested to EIA/JESD22−A114−A. 3. Tested to EIA/JESD22−A115−A. 4. Tested to JESD22−C101−A. 5. Tested to EIA/JESD78. RECOMMENDED OPERATING CONDITIONS Characteristics Symbol Min Max Unit DC Supply Voltage VCC 2.0 5.5 V DC Input Voltage VIN 0.0 5.5 V DC Output Voltage VCC = 0 High or Low State VOUT 0.0 0.0 5.5 VCC V Operating Temperature Range TA −55 +125 °C Input Rise and Fall Time VCC = 3.3 V ± 0.3 V VCC = 5.0 V ± 0.5 V tr , tf 0 0 100 20 ns/V 3.0V GND 50% 50% VCC A Y tPHL tPLH *Includes all probe and jig capacitance CL* TEST POINT DEVICE UNDER TEST OUTPUT Figure 1. Switching Waveforms Figure 2. Test Circuit VOH VOL |
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