전자부품 데이터시트 검색엔진 |
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BY329F 데이터시트(PDF) 2 Page - NXP Semiconductors |
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BY329F 데이터시트(HTML) 2 Page - NXP Semiconductors |
2 / 7 page Philips Semiconductors Product specification Rectifier diodes BY329F, BY329X series fast, soft-recovery ISOLATION LIMITING VALUE & CHARACTERISTIC T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V isol Peak isolation voltage from SOD100 package; R.H. ≤ 65%; clean and - - 1500 V both terminals to external dustfree heatsink V isol R.M.S. isolation voltage from SOD113 package; f = 50-60 Hz; - - 2500 V both terminals to external sinusoidal waveform; R.H. ≤ 65%; clean heatsink and dustfree C isol Capacitance from pin 1 to f = 1 MHz - 10 - pF external heatsink THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-hs Thermal resistance junction to with heatsink compound - - 4.8 K/W heatsink without heatsink compound - - 5.9 K/W R th j-a Thermal resistance junction to in free air. - 55 - K/W ambient STATIC CHARACTERISTICS T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V F Forward voltage I F = 20 A - 1.5 1.85 V I R Reverse current V R = VRWM; Tj = 125 ˚C - 0.1 1.0 mA DYNAMIC CHARACTERISTICS T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT t rr Reverse recovery time I F = 1 A; VR > 30 V; -dIF/dt = 50 A/µs - 125 145 ns Q s Reverse recovery charge I F = 2 A; VR > 30 V; -dIF/dt = 20 A/µs - 0.5 0.7 µC dI R/dt Maximum slope of the reverse I F = 2 A; -dIF/dt = 20 A/µs - 50 60 A/ µs recovery current September 1998 2 Rev 1.100 |
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