전자부품 데이터시트 검색엔진 |
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BY329X-800 데이터시트(PDF) 1 Page - NXP Semiconductors |
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BY329X-800 데이터시트(HTML) 1 Page - NXP Semiconductors |
1 / 6 page Philips Semiconductors Product specification Rectifier diodes BY329X series fast, soft-recovery GENERAL DESCRIPTION QUICK REFERENCE DATA Glass-passivated double diffused SYMBOL PARAMETER MAX. MAX. MAX. UNIT rectifier diodes in a full pack plastic envelope featuring low forward BY329X -800 -1000 -1200 voltage drop, fast reverse recovery V RRM Repetitive peak reverse 800 1000 1200 V and soft recovery characteristic. The voltage devices are intended for use in TV I F(AV) Average forward current 8 8 8 A receivers, monitors and switched I FSM Non-repetitive peak 65 65 65 A mode power supplies. forward current t rr Reverse recovery time 145 145 145 ns PINNING - SOD113 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 cathode 2 anode case isolated LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -800 -1000 -1200 V RSM Non-repetitive peak reverse - 800 1000 1200 V voltage V RRM Repetitive peak reverse voltage - 800 1000 1200 V V RWM Crest working reverse voltage - 600 800 1000 V I F(AV) Average forward current 1 square wave; δ = 0.5; - 8 A T hs ≤ 83 ˚C sinusoidal; a = 1.57; - 7 A T hs ≤ 90 ˚C I F(RMS) RMS forward current - 11 A I FRM Repetitive peak forward current t = 25 µs; δ = 0.5; - 16 A T hs ≤ 83 ˚C I FSM Non-repetitive peak forward t = 10 ms - 65 A current. t = 8.3 ms - 71 A sinusoidal; T j = 150 ˚C prior to surge; with reapplied V RWM(max) I 2tI2t for fusing t = 10 ms - 28 A 2s T stg Storage temperature -40 150 ˚C T j Operating junction temperature - 150 ˚C 12 case k a 1 2 1 Neglecting switching and reverse current losses. May 1995 1 Rev 1.000 |
유사한 부품 번호 - BY329X-800 |
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유사한 설명 - BY329X-800 |
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