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MC100EPT26DR2G 데이터시트(PDF) 4 Page - ON Semiconductor |
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MC100EPT26DR2G 데이터시트(HTML) 4 Page - ON Semiconductor |
4 / 9 page MC100EPT26 http://onsemi.com 4 Table 6. AC CHARACTERISTICS VCC = 3.0 V to 3.6 V; GND = 0.0 V (Note 4) Symbol Characteristic −40°C 25°C 85°C Unit Min Typ Max Min Typ Max Min Typ Max fmax Maximum Frequency (Figure 2) 275 350 275 350 275 350 MHz tPLH, tPHL Propagation Delay to Output Differential (Note 5) 1.2 1.2 1.5 1.5 2.0 1.8 1.2 1.2 1.5 1.5 2.0 1.8 1.3 1.2 1.7 1.5 2.2 1.8 ns tSK+ + tSK−− tSKPP Within Device Skew++ Within Device Skew− − Device−to−Device Skew (Note 6) 15 20 100 60 85 500 15 20 100 60 85 500 20 30 100 85 85 500 ps tJITTER Random Clock Jitter (RMS) (Figure 2) @ v 200 MHz @ > 200 MHz 6 20 30 275 6 40 30 275 6 170 30 275 ps VPP Input Voltage Swing (Differential Configuration) 150 800 1200 150 800 1200 150 800 1200 mV tr tf Output Rise/Fall Times (0.8V − 2.0V) Q, Q 330 600 950 330 600 950 330 650 950 ps NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 4. Measured with a 750 mV 50% duty−cycle clock source. RL = 500 W to GND and CL = 20 pF to GND. Refer to Figure 3. 5. Reference (VCC = 3.3 V ± 5%; GND = 0 V) 6. Skews are measured between outputs under identical transitions. Figure 2. Typical VOH / Jitter versus Frequency (255C) FREQUENCY (MHz) 0.0 1.0 2.0 3.0 VOH VOL 0.5 V JITTER 12 8 4 0 0 100 200 300 |
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