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CAT24C0A1YE-1.8TE13 데이터시트(PDF) 2 Page - Catalyst Semiconductor

부품명 CAT24C0A1YE-1.8TE13
상세설명  1K-Bit Serial EEPROM
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제조업체  CATALYST [Catalyst Semiconductor]
홈페이지  http://www.catalyst-semiconductor.com
Logo CATALYST - Catalyst Semiconductor

CAT24C0A1YE-1.8TE13 데이터시트(HTML) 2 Page - Catalyst Semiconductor

  CAT24C0A1YE-1.8TE13 Datasheet HTML 1Page - Catalyst Semiconductor CAT24C0A1YE-1.8TE13 Datasheet HTML 2Page - Catalyst Semiconductor CAT24C0A1YE-1.8TE13 Datasheet HTML 3Page - Catalyst Semiconductor CAT24C0A1YE-1.8TE13 Datasheet HTML 4Page - Catalyst Semiconductor CAT24C0A1YE-1.8TE13 Datasheet HTML 5Page - Catalyst Semiconductor CAT24C0A1YE-1.8TE13 Datasheet HTML 6Page - Catalyst Semiconductor CAT24C0A1YE-1.8TE13 Datasheet HTML 7Page - Catalyst Semiconductor CAT24C0A1YE-1.8TE13 Datasheet HTML 8Page - Catalyst Semiconductor  
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Discontinued
Part
CAT24C01B
2
Doc. No. 1081, Rev. E
© 2005 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
ABSOLUTE MAXIMUM RATINGS*
Temperature Under Bias ................. –55
°C to +125°C
Storage Temperature ....................... –65
°C to +150°C
Voltage on Any Pin with
Respect to Ground(1) ........... –2.0V to +VCC + 2.0V
VCC with Respect to Ground ............... –2.0V to +7.0V
Package Power Dissipation
Capability (Ta = 25
°C) .................................. 1.0W
Lead Soldering Temperature (10 secs) ............ 300
°C
Output Short Circuit Current(2) ........................ 100mA
*COMMENT
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation of
the device at these or any other conditions outside of those
listed in the operational sections of this specification is not
implied. Exposure to any absolute maximum rating for
extended periods may affect device performance and
reliability.
RELIABILITY CHARACTERISTICS
Symbol
Parameter
Min
Max
Units
Reference Test Method
NEND(3)
Endurance
1,000,000
Cycles/Byte
MIL-STD-883, Test Method 1033
TDR(3)
Data Retention
100
Years
MIL-STD-883, Test Method 1008
VZAP(3)
ESD Susceptibility
2000
Volts
MIL-STD-883, Test Method 3015
ILTH(3)(4)
Latch-up
100
mA
JEDEC Standard 17
D.C. OPERATING CHARACTERISTICS
VCC = +1.8V to +6.0V, unless otherwise specified.
Limits
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
ICC
Power Supply Current
3
mA
fSCL = 100 KHz
ISB(5)
Standby Current (VCC = 5.0V)
1
µAVIN = GND or VCC
ILI
Input Leakage Current
10
µAVIN = GND to VCC
ILO
Output Leakage Current
10
µAVOUT = GND to VCC
VIL
Input Low Voltage
–1VCC x 0.3
V
VIH
Input High Voltage
VCC x 0.7
VCC + 0.5
V
VOL1
Output Low Voltage (VCC = 3.0V)
0.4
V
IOL = 3 mA
VOL2
Output Low Voltage (VCC = 1.8V)
0.5
V
IOL = 1.5 mA
Note:
(1) The minimum DC input voltage is –0.5V. During transitions, inputs may undershoot to –2.0V for periods of less than 20 ns. Maximum DC
voltage on output pins is VCC +0.5V, which may overshoot to VCC + 2.0V for periods of less than 20ns.
(2) Output shorted for no more than one second. No more than one output shorted at a time.
(3) These parameter are tested initially and after a design or process change that affects the parameter according to appropriate AEC-Q100
and JEDEC test methods.
(4) Latch-up protection is provided for stresses up to 100 mA on address and data pins from –1V to VCC +1V.
(5) Maximum standby current (ISB ) = 10µA for the Automotive and Extended Automotive temperature range.
CAPACITANCE TA = 25°C, f = 1.0 MHz, VCC = 5V
Symbol
Test
Max
Units
Conditions
CI/O(3)
Input/Output Capacitance (SDA)
8
pF
VI/O = 0V
CIN(3)
Input Capacitance (A0, A1, A2, SCL, WP)
6
pF
VIN = 0V


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