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BYD12G 데이터시트(PDF) 2 Page - NXP Semiconductors |
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BYD12G 데이터시트(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1998 Dec 03 2 Philips Semiconductors Preliminary specification Controlled avalanche rectifiers BYD12 series FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability • Available in ammo-pack. DESCRIPTION Cavity free cylindrical glass SOD120 package through Implotec ™(1) technology. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. Fig.1 Simplified outline (SOD120) and symbol. handbook, halfpage ka MGL571 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage BYD12D − 200 V BYD12G − 400 V BYD12J − 600 V BYD12K − 800 V BYD12M − 1000 V VR continuous reverse voltage BYD12D − 200 V BYD12G − 400 V BYD12J − 600 V BYD12K − 800 V BYD12M − 1000 V IF(AV) average forward current Tamb =25 °C; printed-circuit board mounting, pitch 5 mm, see Fig.6; averaged over any 20 ms period, see Fig.2 − 0.82 A IFSM non-repetitive peak forward current t = 10 ms half sinewave; Tj =25 °C prior to surge; VR =VRRMmax − 15 A Tstg storage temperature −65 +175 °C Tj junction temperature see Fig.3 −65 +175 °C |
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