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BYD12G 데이터시트(PDF) 2 Page - NXP Semiconductors

부품명 BYD12G
상세설명  Controlled avalanche rectifiers
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제조업체  PHILIPS [NXP Semiconductors]
홈페이지  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYD12G 데이터시트(HTML) 2 Page - NXP Semiconductors

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1998 Dec 03
2
Philips Semiconductors
Preliminary specification
Controlled avalanche rectifiers
BYD12 series
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Available in ammo-pack.
DESCRIPTION
Cavity free cylindrical glass SOD120
package through Implotec
(1)
technology. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
Fig.1 Simplified outline (SOD120) and symbol.
handbook, halfpage
ka
MGL571
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYD12D
200
V
BYD12G
400
V
BYD12J
600
V
BYD12K
800
V
BYD12M
1000
V
VR
continuous reverse voltage
BYD12D
200
V
BYD12G
400
V
BYD12J
600
V
BYD12K
800
V
BYD12M
1000
V
IF(AV)
average forward current
Tamb =25 °C; printed-circuit board
mounting, pitch 5 mm, see Fig.6;
averaged over any 20 ms period,
see Fig.2
0.82
A
IFSM
non-repetitive peak forward current
t = 10 ms half sinewave;
Tj =25 °C prior to surge;
VR =VRRMmax
15
A
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
see Fig.3
−65
+175
°C


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