전자부품 데이터시트 검색엔진 |
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BYD47-20 데이터시트(PDF) 3 Page - NXP Semiconductors |
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BYD47-20 데이터시트(HTML) 3 Page - NXP Semiconductors |
3 / 12 page 1999 Nov 11 3 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYD47 series ELECTRICAL CHARACTERISTICS Tj =25 °C unless otherwise specified. THERMAL CHARACTERISTICS Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.11. For more information please refer to the “General Part of associated Handbook”. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VF forward voltage IF = 1 A; Tj =Tj max; see Fig.8 − 2.05 V IF = 1 A; see Fig.8 − 2.40 V IR reverse current VR =VRRMmax; see Fig.9 − 5 µA VR =VRRMmax; Tj = 125 °C; see Fig.9 − 50 µA trr reverse recovery time when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.12 − 300 ns Cd diode capacitance f = 1 MHz; VR = 0 V; see Fig.10 15 − pF maximum slope of reverse recovery current when switched from IF = 1 A to VR ≥ 30 V and dIF/dt = −1A/µs; see Fig.13 − 5A/ µs SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point 30 K/W Rth j-a thermal resistance from junction to ambient note 1 150 K/W dI R dt -------- |
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유사한 설명 - BYD47-20 |
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