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BYW29EB 데이터시트(PDF) 2 Page - NXP Semiconductors |
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BYW29EB 데이터시트(HTML) 2 Page - NXP Semiconductors |
2 / 8 page Philips Semiconductors Product specification Rectifier diodes BYW29EB, BYW29ED series ultrafast, rugged ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V C Electrostatic discharge Human body model; - 8 kV capacitor voltage C = 250 pF; R = 1.5 k Ω THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance junction - - 2.7 K/W to mounting base R th j-a Thermal resistance junction SOT404 and SOT428 packages, pcb - 50 - K/W to ambient mounted, minimum footprint, FR4 board ELECTRICAL CHARACTERISTICS T j = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V F Forward voltage I F = 8 A; Tj = 150˚C - 0.8 0.895 V I F = 8 A - 0.92 1.05 V I F = 20 A - 1.1 1.3 V I R Reverse current V R = VRWM -2 10 µA V R = VRWM; Tj = 100˚C - 0.2 0.6 mA Q rr Reverse recovered charge I F = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs- 4 11 nC t rr1 Reverse recovery time I F = 1 A; VR ≥ 30 V; -dIF/dt = 100 A/µs20 25 ns t rr2 Reverse recovery time I F = 0.5 A to IR = 1 A; Irec = 0.25 A - 15 20 ns V fr Forward recovery voltage I F = 1 A; dIF/dt = 10 A/µs- 1 - V November 1998 2 Rev 1.300 |
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