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FDS8817NZ 데이터시트(PDF) 2 Page - Fairchild Semiconductor

부품명 FDS8817NZ
상세설명  N-Channel PowerTrench MOSFET 30V, 15A, 7.0mohm
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제조업체  FAIRCHILD [Fairchild Semiconductor]
홈페이지  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS8817NZ 데이터시트(HTML) 2 Page - Fairchild Semiconductor

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FDS8817NZ Rev.C
www.fairchildsemi.com
2
Electrical Characteristics T
J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250μA, VGS = 0V
30
V
ΔBV
DSS
ΔT
J
Breakdown Voltage Temperature
Coefficient
ID = 250μA, referenced to 25°C
20
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 24V, VGS = 0V
1
μA
IGSS
Gate to Source Leakage Current
VGS = ±20V, VDS = 0V
±10
μA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250μA
1
1.8
3
V
ΔV
GS(th)
ΔT
J
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250μA, referenced to 25°C
–6
mV/°C
rDS(on)
Static Drain to Source On Resistance
VGS = 10V, ID = 15A
5.4
7
m
Ω
VGS = 4.5V, ID = 12.6A
7.0
10
VGS = 10V, ID = 15A TJ = 125°C
7.5
11
gFS
Forward Transconductance
VDS = 5V, ID = 15A
54
S
(Note 2)
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 15V, VGS = 0V,
f = 1MHz
1805
2400
pF
Coss
Output Capacitance
335
445
pF
Crss
Reverse Transfer Capacitance
200
300
pF
Rg
Gate Resistance
f = 1MHz
1.4
Ω
Switching Characteristics
td(on)
Turn-On Delay Time
VDD = 15V, ID = 15A
VGS = 10V, RGEN = 6Ω
11
22
ns
tr
Rise Time
13
26
ns
td(off)
Turn-Off Delay Time
25
40
ns
tf
Fall Time
7
14
ns
Qg
Total Gate Charge
VGS = 0V to 10V
VDD = 15V
ID = 15A
32
45
nC
Qg
Total Gate Charge
VGS = 0V to 5V
17
24
nC
Qgs
Gate to Source Charge
6
nC
Qgd
Gate to Drain “Miller” Charge
7
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0V, IS = 2.1A
(Note 2)
0.8
1.2
V
trr
Reverse Recovery Time
IF = 15A, di/dt = 100A/μs
24
36
ns
Qrr
Reverse Recovery Charge
15
23
nC
a) 50°C/W when mounted on a
1in2 pad of 2 oz copper.
b) 125°C/W when mounted on a
minimum pad .
Notes:
1. RθJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain
pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design.
2. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2%.
3. The diode connected between the gate and source serves only as protection against ESD . No gate overvoltage rating is implied.
4. Starting TJ = 25°C, L = 3mH, IAS = 11A, VDD = 30V, VGS = 10V.


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