4N35, 4N36, 4N37

OPTOCOUPLERS

SOES021C – NOVEMBER 1981 – REVISED APRIL 1998

6

POST OFFICE BOX 655303

APPLICATION INFORMATION

The devices consist of a gallium-arsenide infrared-emitting diode and an npn silicon phototransistor. Each

device is available in a 6-terminal plastic dual-in-line package, shown in Figure 9, or in a DCJ plastic dual

surface-mount optocoupler package (see Mechanical Data).

C

L

C

0.021 (0,534)

0.015 (0,381)

6 Places

Seating Plane

L

0.300 (7,62) T.P.

(see Note A)

0.260 (6,61)

0.240 (6,09)

0.012 (0,305)

0.008 (0,203)

0.215 (5,46)

0.115 (2,92)

0.070 (1,78)

0.020 (0,51)

0.090 (2,29)

0.050 (1,27)

4 Places

0.040 (1,01) MIN

0.070 (1,78) MAX

6 Places

0.370 (9,40)

0.330 (8,38)

Index Dot

(see Note B)

105

°

90

°

1

2

3

6

5

4

(see Note C)

0.150 (3,81)

0.125 (3,17)

0.100 (2,54) T.P.

(see Note A)

NOTES: A. Terminals are within 0.005 (0,13) radius of true position (T.P.) with maximum material condition and unit installed.

B. Terminal 1 identified by index dot.

C. The dimensions given fall within JEDEC MO-001 AM dimensions.

D. All linear dimensions are in inches (millimeters).

Figure 9. Plastic Dual-in-Line Package