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CA3046M 데이터시트(PDF) 2 Page - Intersil Corporation

부품명 CA3046M
상세설명  General Purpose NPN Transistor Array
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제조업체  INTERSIL [Intersil Corporation]
홈페이지  http://www.intersil.com/cda/home
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CA3046M 데이터시트(HTML) 2 Page - Intersil Corporation

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2
Absolute Maximum Ratings
Thermal Information
Collector-to-Emitter Voltage (VCEO) . .. .. .. .. .. ... .. .. .. . 15V
Collector-to-Base Voltage (VCBO) . .. .. .. .. .. .. ... .. .. .. . 20V
Collector-to-Substrate Voltage (VCIO, Note 1) . . . . ... .. .. .. . 20V
Emitter-to-Base Voltage (VEBO) . .. .. .. .. .. .. .. . . . . . . . . . . 5V
Collector Current (IC) . . ... .. .. .. .. .. .. .. .. .. ... .. .. ..50mA
Operating Conditions
Temperature Range . . . ... .. .. .. .. .. .. .. .. .. . -55oCto 125oC
Thermal Resistance (Typical, Note 2)
θJA (oC/W) θJC (oC/W)
PDIP Package . . . . . . ... .. .. .. .. ..
180
N/A
SOIC Package . . . . . . ... .. .. .. .. ..
220
N/A
Maximum Power Dissipation (Any One Transistor) . . . . . . . 300mW
Maximum Junction Temperature (Plastic Package) . . . . . . . . 150oC
Maximum Storage Temperature Range .. .. .. .. .. -65oCto 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC
(SOIC - Lead Tips Only)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationof the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. The collector of each transistor of the CA3046 is isolated from the substrate by an integral diode. The substrate (Terminal 13) must be connected
to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action.
2.
θJA is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications
TA =25
oC, characteristics apply for each transistor in CA3046 as specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
DC CHARACTERISTICS
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC =10µA, IE =0
20
60
-
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC =1mA,IB =0
15
24
-
V
Collector-to-Substrate Breakdown Voltage
V(BR)CIO
IC =10µA, ICI =0
20
60
-
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE =10µA, IC =0
5
7
-
V
Collector Cutoff Current (Figure 1)
ICBO
VCB =10V,IE = 0
-
0.002
40
nA
Collector Cutoff Current (Figure 2)
ICEO
VCE =10V,IB = 0
-
See Fig. 2
0.5
µA
Forward Current Transfer Ratio (Static Beta)
(Note 3) (Figure 3)
hFE
VCE =3V
IC = 10mA
-
100
-
-
IC =1mA
40
100
-
-
IC =10µA-
54
-
-
Input Offset Current for Matched Pair Q1 and Q2.
|IIO1 -IIO2|(Note 3) (Figure 4)
VCE =3V, IC =1mA
-
0.3
2
µA
Base-to-Emitter Voltage (Note 3) (Figure 5)
VBE
VCE =3V
IE =1mA
-
0.715
-
V
IE = 10mA
-
0.800
-
V
Magnitude of Input Offet Voltage for Differential Pair
|VBE1 -VBE2| (Note 3) (Figures 5, 7)
VCE =3V, IC = 1mA
-
0.45
5
mV
Magnitude of Input Offset Voltage for Isolated
Transistors |VBE3 -VBE4|, |VBE4 -VBE5|,
|VBE5 -VBE3| (Note 3) (Figures 5, 7)
VCE =3V, IC = 1mA
-
0.45
5
mV
Temperature Coefficient of Base-to-Emitter
Voltage (Figure 6)
VCE =3V, IC = 1mA
-
-1.9
-
mV/oC
Collector-to-Emitter Saturation Voltage
VCES
IB =1mA,IC = 10mA
-
0.23
-
V
Temperature Coefficient: Magnitude of Input Off-
set Voltage (Figure 7)
VCE =3V, IC =1mA
-
1.1
-
µV/oC
DYNAMIC CHARACTERISTICS
Low Frequency Noise Figure (Figure 9)
NF
f = 1kHz, VCE =3V, IC =100µA,
Source Resistance = 1k
-3.25
-
dB
Low Frequency, Small Signal Equivalent
Circuit Characteristics
Forward Current Transfer Ratio (Figure 11)
hFE
f=1kHz, VCE =3V, IC =1mA
-
110
-
-
Short Circuit Input Impedance (Figure 11)
hIE
f=1kHz, VCE =3V, IC =1mA
-
3.5
-
k
Open Circuit Output Impedance (Figure 11)
hOE
f=1kHz, VCE =3V, IC =1mA
-
15.6
-
µS
∆V
BE
∆T
---------------
∆V
IO
∆T
----------------
CA3046


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