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| UPG2250T5N |
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DESCRIPTION The µPG2250T5N is a GaAs MMIC for power amplifier which was developed for Bluetooth Class 1. This device realizes high efficiency, high gain and high output power. This device is housed in a 6-pin plastic TSON (Thin Small Out-line Non-leaded) package. And this package is able to high-density surface mounting. FEATURES • Operating frequency : fopt = 2 400 to 2 500 MHz (2 450 MHz TYP.) • Supply voltage : VDD1, 2, 3 = 1.5 to 3.5 V (1.8 V TYP.) • Control voltage : Vcont = 1.5 to 2.1 V (1.8 V TYP.) • Circuit current : IDD = 100 mA TYP. @ VDD1, 2, 3 = 1.8 V, Vcont = 1.8 V, Pout = +19 dBm • Output power : Pout = +20.0 dBm TYP. @ VDD1, 2, 3 = 1.8 V, Vcont = 1.8 V, Pin = −5 dBm • Gain control range : GCR = 60 dB TYP. @ VDD1, 2, 3 = 1.8 V, Vcont = 0 to 1.8 V, Pin = −5 dBm • High efficiency : PAE = 55% TYP. @ VDD1, 2, 3 = 1.8 V, Vcont = 1.8 V, Pin = −5 dBm • High-density surface mounting : 6-pin plastic TSON package (1.5 × 1.5 × 0.37 mm) APPLICATION • Power Amplifier for Bluetooth Class 1 ORDERING INFORMATION Part Number Order Number Package Marking Supplying Form µPG2250T5N-E2 µPG2250T5N-E2-A 6-pin plastic TSON (Pb-Free) G5C • Embossed tape 8 mm wide • Pin 1, 6 face the perforation side of the tape • Qty 3 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: µPG2250T5N-A 2006 Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. 1.8 V, POWER AMPLIFIER FOR Bluetooth TM Class 1 GaAs INTEGRATED CIRCUIT µPG2250T5N Document No. PG10639EJ01V0DS (1st edition) Date Published September 2006 NS CP(K) |
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