전자부품 데이터시트 검색엔진 |
|
IRFZ44N 데이터시트(PDF) 2 Page - NXP Semiconductors |
|
IRFZ44N 데이터시트(HTML) 2 Page - NXP Semiconductors |
2 / 8 page Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOS TM transistor STATIC CHARACTERISTICS T j= 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)DSS Drain-source breakdown V GS = 0 V; ID = 0.25 mA; 55 - - V voltage T j = -55˚C 50 - - V V GS(TO) Gate threshold voltage V DS = VGS; ID = 1 mA 2.0 3.0 4.0 V T j = 175˚C 1.0 - - V T j = -55˚C - - 4.4 I DSS Zero gate voltage drain current V DS = 55 V; VGS = 0 V; - 0.05 10 µA T j = 175˚C - - 500 µA I GSS Gate source leakage current V GS = ±10 V; VDS = 0 V - 0.04 1 µA T j = 175˚C - - 20 µA ±V (BR)GSS Gate source breakdown voltage I G = ±1 mA; 16 - - V R DS(ON) Drain-source on-state V GS = 10 V; ID = 25 A - 15 22 m Ω resistance T j = 175˚C - - 42 m Ω DYNAMIC CHARACTERISTICS T mb = 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT g fs Forward transconductance V DS = 25 V; ID = 25 A 6 - - S C iss Input capacitance V GS = 0 V; VDS = 25 V; f = 1 MHz - 1350 1800 pF C oss Output capacitance - 330 400 pF C rss Feedback capacitance - 155 215 pF Q g Total gate charge V DD = 44 V; ID = 50 A; VGS = 10 V - - 62 nC Q gs Gate-cource charge - - 15 nC Q gd Gate-drain (miller) charge - - 26 nC t d on Turn-on delay time V DD = 30 V; ID = 25 A; - 18 26 ns t r Turn-on rise time V GS = 10 V; RG = 10 Ω - 5075ns t d off Turn-off delay time Resistive load - 40 50 ns t f Turn-off fall time - 30 40 ns L d Internal drain inductance Measured from contact screw on - 3.5 - nH tab to centre of die L d Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH from package to centre of die L s Internal source inductance Measured from source lead 6 mm - 7.5 - nH from package to source bond pad REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS T j = 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I DR Continuous reverse drain - - 49 A current I DRM Pulsed reverse drain current - - 160 A V SD Diode forward voltage I F = 25 A; VGS = 0 V - 0.95 1.2 V I F = 40 A; VGS = 0 V - 1.0 - t rr Reverse recovery time I F = 40 A; -dIF/dt = 100 A/µs; - 47 - ns Q rr Reverse recovery charge V GS = -10 V; VR = 30 V - 0.15 - µC February 1999 2 Rev 1.000 |
유사한 부품 번호 - IRFZ44N |
|
유사한 설명 - IRFZ44N |
|
|
링크 URL |
개인정보취급방침 |
ALLDATASHEET.CO.KR |
ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |