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AM29DL400B_05 데이터시트(Datasheet) 3 Page - Advanced Micro Devices

부품명 AM29DL400B_05
상세내용  4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
PDF  47 Pages
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제조사  AMD [Advanced Micro Devices]
홈페이지  http://www.amd.com
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This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data Sheet may
be revised by subsequent versions or modifications due to changes in technical specifications.
Publication# 21606
Rev: E Amendment/+4
Issue Date: June 7, 2005
Am29DL400B
4 Megabit (512 K x 8-Bit/256 K x 16-Bit)
CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
DISTINCTIVE CHARACTERISTICS
Simultaneous Read/Write operations
— Host system can program or erase in one bank,
then immediately and simultaneously read
from the other bank
— Zero latency between read and write
operations
— Read-while-erase
— Read-while-program
Single power supply operation
— 2.7 to 3.6 volt read and write operations for
battery-powered applications
Manufactured on 0.32 µm process
technology
High performance
— Access times as fast as 70 ns
Low current consumption (typical
values at 5 MHz)
— 7 mA active read current
— 21 mA active read-while-program or read-
while-erase current
— 17 mA active program-while-erase-suspended
current
— 200 nA in standby mode
— 200 nA in automatic sleep mode
—Standard tCE chip enable access time applies to
transition from automatic sleep mode to active
mode
Flexible sector architecture
— Two 16 Kword, two 8 Kword, four 4 Kword, and
six 32 Kword sectors in word mode
— Two 32 Kbyte, two 16 Kbyte, four 8 Kbyte, and
six 64 Kbyte sectors in byte mode
— Any combination of sectors can be erased
— Supports full chip erase
Unlock Bypass Program Command
— Reduces overall programming time when
issuing multiple program command sequences
Sector protection
— Hardware method of locking a sector to
prevent any program or erase operation within
that sector
— Sectors can be locked in-system or via
programming equipment
— Temporary Sector Unprotect feature allows
code changes in previously locked sectors
Top or bottom boot block configurations
available
Embedded Algorithms
— Embedded Erase algorithm automatically
pre-programs and erases sectors or entire chip
— Embedded Program algorithm automatically
programs and verifies data at specified address
■ Minimum 1 million program/erase cycles
guaranteed per sector
20-year data retention at 125° C
— Reliable operation for the life of the system
Package options
— 44-pin SO
— 48-pin TSOP
Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash standard
— Superior inadvertent write protection
Data# Polling and Toggle Bits
— Provides a software method of detecting
program or erase cycle completion
Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or
erase cycle completion
Erase Suspend/Erase Resume
— Suspends or resumes erasing sectors to allow
reading and programming in other sectors
— No need to suspend if sector is in the other
bank
Hardware reset pin (RESET#)
— Hardware method of resetting the device to
reading array data
This product has been retired and is not recommended for designs. For new and current designs, S29AL004D supersedes Am29DL400B and is the factory-recommended migration path.
Please refer to the S29AL004D datasheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only.




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