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AM29F080B-70EE 데이터시트(PDF) 3 Page - Advanced Micro Devices |
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AM29F080B-70EE 데이터시트(HTML) 3 Page - Advanced Micro Devices |
3 / 39 page DATA SHEET This Data Sheet states AMD’s current technical specifications regarding the Product described herein. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. Publication# 21503 Rev: G Amendment: 5 Issue Date: November 1, 2006 Am29F080B 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS ■ 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.32 µm process technology — Compatible with 0.5 µm Am29F080 device ■ High performance — Access times as fast as 55 ns ■ Low power consumption — 25 mA typical active read current — 30 mA typical program/erase current — 1 µA typical standby current (standard access time to active mode) ■ Flexible sector architecture — 16 uniform sectors of 64 Kbytes each — Any combination of sectors can be erased. — Supports full chip erase — Group sector protection: A hardware method of locking sector groups to prevent any program or erase operations within that sector group Temporary Sector Group Unprotect allows code changes in previously locked sectors ■ Embedded Algorithms — Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors — Embedded Program algorithm automatically writes and verifies bytes at specified addresses ■ Minimum 1,000,000 program/erase cycles per sector guaranteed ■ 20-year data retention at 125°C — Reliable operation for the life of the system ■ Package options — 40-pin TSOP — 44-pin SO ■ Compatible with JEDEC standards — Pinout and software compatible with single-power-supply Flash standard — Superior inadvertent write protection ■ Data# Polling and toggle bits — Provides a software method of detecting program or erase cycle completion ■ Ready/Busy# output (RY/BY#) — Provides a hardware method for detecting program or erase cycle completion ■ Erase Suspend/Erase Resume — Suspends a sector erase operation to read data from, or program data to, a non-erasing sector, then resumes the erase operation ■ Hardware reset pin (RESET#) — Resets internal state machine to the read mode ■ Command sequence optimized for mass storage — Specific addresses not required for unlock cycles |
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