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AM29F200BB-90DGE1 데이터시트(PDF) 2 Page - Advanced Micro Devices |
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AM29F200BB-90DGE1 데이터시트(HTML) 2 Page - Advanced Micro Devices |
2 / 11 page SUPPLEMENT Publication# 21257 Rev: D Amendment/+4 Issue Date: June 27, 2001 Am29F200B Known Good Die 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory—Die Revision 1 DISTINCTIVE CHARACTERISTICS ■ 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Manufactured on 0.32 µm process technology — Compatible with 0.5 µm Am29F200A device ■ High performance — 70, 90, or 120 ns access time ■ Low power consumption — 20 mA typical active read current (byte mode) — 28 mA typical active read current for (word mode) — 30 mA typical program/erase current — 1 µA typical standby current ■ Sector erase architecture — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and three 64 Kbyte sectors (byte mode) — One 8 Kword, two 4 Kword, one 16 Kword, and three 32 Kword sectors (word mode) — Supports full chip erase — Sector Protection features: A hardware method of locking a sector to prevent any program or erase operations within that sector Sectors can be locked via programming equipment Temporary Sector Unprotect feature allows code changes in previously locked sectors ■ Top or bottom boot block configurations available ■ Embedded Algorithms — Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors — Embedded Program algorithm automatically writes and verifies data at specified addresses ■ Minimum 1,000,000 write/erase cycles guaranteed ■ Compatible with JEDEC standards — Pinout and software compatible with single-power-supply flash — Superior inadvertent write protection ■ Data# Polling and Toggle Bit — Detects program or erase cycle completion ■ Ready/Busy# output (RY/BY#) — Hardware method for detection of program or erase cycle completion ■ Erase Suspend/Resume — Supports reading data from a sector not being erased ■ Hardware RESET# pin — Resets internal state machine to the reading array data ■ 20-year data retention at 125°C ■ Tested to datasheet specifications at temperature — Contact AMD for higher temperature range devices ■ Quality and reliability levels equivalent to standard packaged components ■ Shipped in waffle pack, surftape, and unsawn wafer ■ 500 µm die/wafer thickness |
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