P320DB90VI datasheet(46/49 Pages) AMD

부품명	P320DB90VI

상세설명	32 Megabit (2 M x 16-Bit/1 M x 32-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory

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제조업체	AMD [Advanced Micro Devices]

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44

Am29PL320D

June 13, 2005

ERASE AND PROGRAMMING PERFORMANCE

Notes:

1. Typical program and erase times assume the following conditions: 25

°C, 3.0 V V

CC, 1,000,000 cycles. Additionally,

programming typicals assume checkerboard pattern.

2. Under worst case conditions of 90°C, VCC = 2.7 V, 1,000,000 cycles.

3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most words

program faster than the maximum program times listed.

4. In the pre-programming step of the Embedded Erase algorithm, all words are programmed to 00h before erasure.

5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See

Table 13 for further information on command definitions.

6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.

LATCHUP CHARACTERISTICS

Includes all inputs except VCC. Test conditions: VCC = 3.0 V, one input at a time.

DATA RETENTION

* For reference only. BSC is an ANSI standard for Basic Space Centering.

BGA PACKAGE CAPACITANCE

Notes:

1. Sampled, not 100% tested.

2. Test conditions TA = 25°C, f = 1.0 MHz.

Parameter

Typ

(Note 1)

Max

(Note 2)

Unit

Comments

Sector Erase Time, 96 and 128 KByte

sector

260

s

Excludes 00h programming

prior to erasure (Note 4)

Sector Erase Time, 8 and 16 KByte sector

0.5

60

Chip Erase Time

33.5

s

Word Programming Time

14.3

300

µs

Excludes system level

overhead (Note 5)

Double Word Programming Time

18.3

360

µs

Chip Programming Time

(Note 3)

Word Mode

28

84

s

Double Word

Mode

18

54

s

Description

Min

Max

Input voltage with respect to VSS on all inputs except I/O inputs

(including A9 and OE#)

–1.0 V

12.5 V

Input voltage with respect to VSS on all I/O inputs

–1.0 V

VCC + 1.0 V

VCC Current

–100 mA

+100 mA

Parameter

Test Conditions

Min

Unit

Minimum Pattern Data Retention Time

150

°C

10

Years

125

°C

20

Years

Parameter Symbol

Parameter Description

Test Setup

Typ

Max

Unit

CIN

Input Capacitance

VIN = 0

4.2

5.0

pF

COUT

Output Capacitance

VOUT = 0

5.4

6.5

pF

CIN2

Control Pin Capacitance

VIN = 0

3.9

4.7

pF

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SPANSION	AM29PL320D	947Kb / 50P	32 Megabit (2 M x 16-Bit/1 M x 32-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory
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P320DB90VI 데이터시트(PDF) 46 Page - Advanced Micro Devices

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