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AM41DL32X4G 데이터시트(Datasheet) 3 Page - Advanced Micro Devices

부품명 AM41DL32X4G
상세내용  32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
PDF  65 Pages
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제조사  AMD [Advanced Micro Devices]
홈페이지  http://www.amd.com
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Am41DL32x4G
November 12, 2001
P R E L IMINARY
GENERAL DESCRIPTION
Am29DL32xG Features
The Am29DL322G/323G/324G consists of 32 megabit,
3.0 volt-only flash memory devices, organized as
2,097,152 words of 16 bits each or 4,194,304 bytes of
8 bits each. Word mode data appears on DQ0–DQ15;
byte mode data appears on DQ7–DQ0. The device is
designed to be programmed in-system with the stan-
dard 3.0 volt V
CC supply, and can also be programmed
in standard EPROM programmers.
The devices are available with access times of 85 and
70 ns. The device is offered in a 73-ball FBGA pack-
age. Standard control pins—chip enable (CE#f), write
enable (WE#), and output enable (OE#)—control nor-
mal r ead and wr i te oper at i ons , and av oi d bus
contention issues.
The devices requires only a single 3.0 volt power
supply for both read and write functions. Internally
generated and regulated voltages are provided for the
program and erase operations.
Simultaneous Read/Write Operations with
Zero Latency
The Simultaneous Read/Write architecture provides
simultaneous operation by dividing the memory
space into two banks. The device can improve overall
system performance by allowing a host system to pro-
gram or erase in one bank, then immediately and
simultaneously read from the other bank, with zero la-
tency. This releases the system from waiting for the
completion of program or erase operations.
The Am29DL32xG device family uses multiple bank
architectures to provide flexibility for different applica-
tions. Three devices are available with the following
bank sizes:
The Secured Silicon (SecSi) Sector is an extra 256
byte sector capable of being permanently locked by
AMD or customers. The SecSi Sector Indicator Bit
(DQ7) is permanently set to a 1 if the part is factory
locked, and set to a 0 if customer lockable. This
way, customer lockable parts can never be used to re-
place a factory locked part.
Factory locked parts provide several options. The
SecSi Sector may store a secure, random 16 byte
ESN (Electronic Serial Number). Customer Lockable
devices are one-time programmable and one-time
lockable.
DMS (Data Management Software) allows systems
to easily take advantage of the advanced architecture
of the simultaneous read/write product line by allowing
removal of EEPROM devices. DMS will also allow the
system software to be simplified, as it will perform all
functions necessary to modify data in file structures,
as opposed to single-byte modifications. To write or
update a particular piece of data (a phone number or
configuration data, for example), the user only needs
to state which piece of data is to be updated, and
where the updated data is located in the system. This
i s a n adv antage c o mpa r ed to s y s t em s whe r e
user-written software must keep track of the old data
location, status, logical to physical translation of the
data onto the Flash memory device (or memory de-
vices), and more. Using DMS, user-written software
does not need to interface with the Flash memory di-
rectly. Instead, the user's software accesses the Flash
memory by calling one of only six functions. AMD pro-
vides this software to simplify system design and
software integration efforts.
The device offers complete compatibility with the
JEDEC single-power-supply Flash command set
standard. Commands are written to the command
register using standard microprocessor write timings.
Reading data out of the device is similar to reading
from other Flash or EPROM devices.
The host system can detect whether a program or
erase operation is complete by using the device sta-
tus bits: RY/BY# pin, DQ7 (Data# Polling) and
DQ6/DQ2 (toggle bits). After a program or erase cycle
has been completed, the device automatically returns
to reading array data.
The sector erase architecture allows memory sec-
tors to be erased and reprogrammed without affecting
the data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection measures include a low
V
CC detector that automatically inhibits write opera-
tions during power transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of the sectors of mem-
or y. T h i s c a n b e ac hi ev ed i n - s y s tem or v i a
programming equipment.
The device offers two power-saving features. When
addresses have been stable for a specified amount of
time, the device enters the automatic sleep mode.
Th e s ys tem can al so plac e the de vi ce into the
standby mode. Power consumption is greatly re-
duced in both modes.
Device
Bank 1
Bank 2
DL322
4
28
DL323
8
24
DL324
16
16




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부품명상세내용Html View제조사
AM41DL32X8G32 Megabit 4 M x 8-Bit/2 M x 16-Bit CMOS 3.0 Volt-only Simultaneous Read/Write Flash Memory and 8 Mbit 1 M x 8-Bit/512 K x 16-Bit Static RAM 1 2 3 4 5 MoreAdvanced Micro Devices
AM29DL400B_054 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 3.0 Volt-only Simultaneous Operation Flash Memory 1 2 3 4 5 MoreAdvanced Micro Devices
AM29DL322D_0532 Megabit 4 M x 8-Bit/2 M x 16-Bit CMOS 3.0 Volt-only Simultaneous Operation Flash Memory 1 2 3 4 5 MoreAdvanced Micro Devices
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AM29DL16XD_0616 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only Simultaneous Operation Flash Memory 1 2 3 4 5 MoreAdvanced Micro Devices
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AM29F400B_064 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory 1 2 3 4 5 MoreAdvanced Micro Devices
AM29LV320D32 Megabit 4 M x 8-Bit/2 M x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory 1 2 3 4 5 MoreAdvanced Micro Devices

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