AM29LV641ML101REI datasheet(31/60 Pages) AMD

부품명	AM29LV641ML101REI

상세설명	64 Megabit (4 M x 16-Bit) MirrorBit??3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O??Control

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31 / 60 page

December 21, 2005

Am29LV641MH/L

29

DA TA SH EET

The system can monitor DQ3 to determine if the sec-

tor erase timer has timed out (See the section on DQ3:

Sector Erase Timer.). The time-out begins from the ris-

ing edge of the final WE# pulse in the command

sequence.

When the Embedded Erase algorithm is complete, the

device returns to reading array data and addresses

are no longer latched. The system can determine the

status of the erase operation by reading DQ7, DQ6, or

DQ2 in the erasing sector. Refer to the Write Opera-

tion Status section for information on these status bits.

Once the sector erase operation has begun, only the

Erase Suspend command is valid. All other com-

mands are ignored. However, note that a hardware

reset immediately terminates the erase operation. If

that occurs, the sector erase command sequence

should be reinitiated once the device has returned to

reading array data, to ensure data integrity.

Figure 7 illustrates the algorithm for the erase opera-

tion. Refer to the Erase and Program Operations ta-

bles in the AC Characteristics section for parameters,

and Figure 20 section for timing diagrams.

Erase Suspend/Erase Resume

Commands

The Erase Suspend command, B0h, allows the sys-

tem to interrupt a sector erase operation and then read

data from, or program data to, any sector not selected

for erasure. This command is valid only during the sec-

tor erase operation, including the 50 µs time-out pe-

riod during the sector erase command sequence. The

Erase Suspend command is ignored if written during

the chip erase operation or Embedded Program

algorithm.

When the Erase Suspend command is written during

the sector erase operation, the device requires a typi-

cal of 5 µs (maximum of 20 µs) to suspend the erase

operation. However, when the Erase Suspend com-

mand is written during the sector erase time-out, the

device immediately terminates the time-out period and

suspends the erase operation.

After the erase operation has been suspended, the

device enters the erase-suspend-read mode. The sys-

tem can read data from or program data to any sector

not selected for erasure. (The device “erase sus-

pends” all sectors selected for erasure.) Reading at

any address within erase-suspended sectors pro-

duces status information on DQ7–DQ0. The system

can use DQ7, or DQ6 and DQ2 together, to determine

if a sector is actively erasing or is erase-suspended.

Refer to the Write Operation Status section for infor-

mation on these status bits.

After an erase-suspended program operation is com-

plete, the device returns to the erase-suspend-read

mode. The system can determine the status of the

program operation using the DQ7 or DQ6 status bits,

just as in the standard word program operation.

Refer to the Write Operation Status section for more

information.

In the erase-suspend-read mode, the system can also

issue the autoselect command sequence. Refer to the

Autoselect Mode and Autoselect Command Sequence

sections for details.

To resume the sector erase operation, the system

must write the Erase Resume command. Fur ther

writes of the Resume command are ignored. Another

Erase Suspend command can be written after the chip

has resumed erasing.

Note: During an erase operation, this flash device per-

forms multiple internal operations which are invisible

to the system. When an erase operation is suspended,

any of the internal operations that were not fully com-

pleted must be restarted. As such, if this flash device

is continually issued suspend/resume commands in

rapid succession, erase progress will be impeded as a

function of the number of suspends. The result will be

a longer cumulative erase time than without suspends.

Note that the additional suspends do not affect device

reliability or future performance. In most systems rapid

erase/suspend activity occurs only briefly. In this ex-

ample, erase performance will not be significantly im-

pacted.

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제조업체	부품명	데이터시트	상세설명
SPANSION	AM29LV641ML101REI	1Mb / 60P	64 Megabit (4 M x 16-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control

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Advanced Micro Devices	AM29LV640MU	1Mb / 54P	64 Megabit (4 M x 16-Bit) MirrorBit??3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O??Control
Advanced Micro Devices	AM29LV640MU	1Mb / 59P	64 Megabit (4 M x 16-Bit) MirrorBit??3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O??Control
SPANSION	AM29LV641MH	1Mb / 60P	64 Megabit (4 M x 16-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
Advanced Micro Devices	AM29LV065M	499Kb / 11P	64 Megabit (8 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
Advanced Micro Devices	AM29LV065MU	1Mb / 62P	64 Megabit (8 M x 8-Bit) MirrorBit??3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O??Control
SPANSION	AM29LV640MH	1Mb / 62P	64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
Advanced Micro Devices	AM29LV640MH	1Mb / 62P	64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit??3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O??Control
SPANSION	AM29LV641G	1Mb / 55P	64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
SPANSION	AM29LV033MU	1Mb / 61P	32 Megabit (4 M x 8-Bit) MirrorBit??3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O??Control
Advanced Micro Devices	AM29LV641G	1Mb / 55P	64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O??Control

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