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AM29LV641MH101FI 데이터시트(PDF) 59 Page - Advanced Micro Devices

부품명 AM29LV641MH101FI
상세설명  64 Megabit (4 M x 16-Bit) MirrorBit??3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O??Control
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제조업체  AMD [Advanced Micro Devices]
홈페이지  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29LV641MH101FI 데이터시트(HTML) 59 Page - Advanced Micro Devices

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December 21, 2005
Am29LV641MH/L
57
DA TA SH EET
Byte/Word Program Command Sequence, Sector
Erase Command Sequence, and Chip Erase
Command Sequence
Noted that the SecSi Sector, autoselect, and CFI func-
tions are unavailable when a program or erase opera-
tion is in progress.
Common Flash Memory Interface (CFI)
Changed CFI website address
Figure 6. Program Suspend/Program Resume
Change wait time to 15
μs.
CMOS Compatible
Added I
LR row to table
Changed V
IH1 and VIH2 minimum to 1.9.
Removed typos in notes.
Hardware Reset, CMOS Tables, Erase and Program
Operations, Temporary Sector Unprotect, and
Alternate CE# Controlled Erase and Program
Operations
Added Note.
Revision B+6 (February 16, 2003)
Distinctive Characteristics
Corrected performance characteristics.
Product Selector Guide
Added note 3.
Ordering Information
Corrected Valid Combination to reflect speed option
changes.
Added Note.
AC Characteristics
Removed 90, 90R speed option.
Added Note
Input values in the t
WHWH1 and tWHWH2 parameters in
the Erase and Program Options table that were previ-
ously TBD. Also added notes 5 and 6.
Input values in the t
WHWH1 and tWHWH2 parameters in
the Alternate CE# Controlled Erase and Program Op-
tions table that were previously TBD. Also added notes
5.
Erase and Programming Performance
Input values into table that were previously TBD.
Added note 3 and 4.
Revision B+7 (June 12, 2003)
Ordering Information
Added 90R speed grade, modified note.
Erase and programming Performance
Modified table, inserted values for Typical.
Revision B+8 (February 13, 2004)
Table 1 Device Bus Operations
Modified ACC column, replaced instances of X to L/H.
Word/Byte Program Command Sequence
Removed reference to byte.
Erase Suspend/Erase Resume Commands
Added note on flash device performance during sus-
pend/erase mode.
Table 10 Command Definitions
Modified Program/Erase Suspend and Program/Erase
Resume from BA to XXX (Don’t Care).
AC Characteristics - Erase and Program
Operations
Added t
POLL information and note.
AC Characteristics - Alternate CE# Controlled
Erase and Program Operations
Added tPOLL information and note.
AC Characteristics Figures
Added tPOLL timing to Figure 18, Program Operation
Timings; Figure 21, Data# Polling Timings (During
Embedded Algorithms); and Figure 26, Alternate CE#
Controlled Write (Erase/Program) Operation Timings.
Erase and Programming Performance
Removed reference to byte.
Trademarks
Updated.
Revision B+9 (August 23, 2004)
Added Max programming specifications.
Added notation referencing superseding documenta-
tion.
Revision B+10 (December 21, 2005)
Global
This product has been retired and is not available for
designs. For new and current designs, S29GL064A
supersedes Am29LV641M H/L and is the factory-rec-
ommended migration path. Please refer to the
S29GL064A datasheet for specifications and ordering
information. Availability of this document is retained for
reference and historical purposes only.


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