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AM41DL1634DB70IT 데이터시트(Datasheet) 39 Page - Advanced Micro Devices

부품명 AM41DL1634DB70IT
상세내용  16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
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제조사  AMD [Advanced Micro Devices]
홈페이지  http://www.amd.com
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 39 page
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38
Am41DL16x4D
P R E L IMINARY
Notes:
1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH.
2. Maximum I
CC specifications are tested with VCC = VCCmax.
3. ICC active while Embedded Erase or Embedded Program is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns. Typical sleep mode current is
200 nA.
5. Not 100% tested.
VLKO
Flash Low VCC Lock-Out Voltage
(Note 5)
2.3
2.5
V
SRAM DC AND OPERATING CHARACTERISTICS
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
ILI
Input Leakage Current
VIN = VSS to VCC
–1.0
1.0
µA
I
LO
Output Leakage Current
CE1#s = V
IH, CE2s = VIL or OE# =
V
IH or WE# = VIL, VIO= VSS to VCC
–1.0
1.0
µA
I
CC1s
Average Operating Current
Cycle time = 1 µs, 100% duty,
I
IO = 0 mA, CE1#s ≤ 0.2 V,
CE2
≥ V
CC – 0.2 V, VIN ≤ 0.2 V or
V
IN ≥ VCC – 0.2 V
3mA
I
CC2s
Average Operating Current
Cycle time = Min., I
IO = 0 mA,
100% duty, CE1#s = V
IL, CE2s =
V
IH, VIN = VIL = or VIH
22
mA
VOL
Output Low Voltage
IOL = 2.1 mA
0.4
V
V
OH
Output High Voltage
I
OH = –1.0 mA
2.4
V
I
SB1
Standby Current (CMOS)
CE1#s
≥ V
CC – 0.2 V, CE2 ≥ VCC
0.2 V (CE1#s controlled) or 0 V
CE2
≤ 0.2 V (CE2s controlled),
CIOs = V
SS or VCC, Other input = 0
~ V
CC
10
µA
DC CHARACTERISTICS (Continued)
CMOS Compatible
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit




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