AM41DL3234GB70IS datasheet(62/65 Pages) AMD

부품명	AM41DL3234GB70IS

상세설명	32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM

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제조업체	AMD [Advanced Micro Devices]

홈페이지	http://www.amd.com

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62 / 65 page

November 12, 2001

Am41DL32x4G

61

P R E L IMINARY

Flash Erase And Programming Performance

Notes:

1. Typical program and erase times assume the following conditions: 25

°C, 3.0 V V

CC, 1,000,000 cycles. Additionally,

programming typicals assume checkerboard pattern.

2. Under worst case conditions of 90

°C, V

CC = 2.7 V, 1,000,000 cycles.

3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes

program faster than the maximum program times listed.

4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.

5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Tables

15 and 17 or further information on command definitions.

6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.

FLASH LATCHUP CHARACTERISTICS

Note: Includes all pins except V

CC. Test conditions: VCC = 3.0 V, one pin at a time.

PACKAGE PIN CAPACITANCE

Note: 7.Test conditions T

A = 25°C, f = 1.0 MHz.

FLASH DATA RETENTION

Parameter

Typ (Note 1)

Max (Note 2)

Unit

Comments

Sector Erase Time

0.4

5

sec

Excludes 00h programming

prior to erasure (Note 4)

Chip Erase Time

28

sec

Byte Program Time

5

150

µs

Excludes system level

overhead (Note 5)

Word Program Time

7

210

µs

Accelerated Byte/Word Program Time

4

120

µs

Chip Program Time

(Note 3)

Byte Mode

21

63

sec

Word Mode

14

42

Description

Min

Max

Input voltage with respect to VSS on all pins except I/O pins

(including OE#, and RESET#)

–1.0 V

12.5 V

Input voltage with respect to V

SS on all I/O pins

–1.0 V

V

CC + 1.0 V

V

CC Current

–100 mA

+100 mA

Parameter

Symbol

Description

Test Setup

Typ

Max

Unit

C

IN

Input Capacitance

V

IN = 0

1114pF

COUT

Output Capacitance

VOUT = 0

1216pF

C

IN2

Control Pin Capacitance

V

IN = 0

1416pF

CIN3

WP#/ACC Pin Capacitance

VIN = 0

1720pF

Parameter Description

Test Conditions

Min

Unit

Minimum Pattern Data Retention Time

150

°C

10

Years

125

°C

20

Years

유사한 부품 번호 - AM41DL3234GB70IS

제조업체	부품명	데이터시트	상세설명
Advanced Micro Devices	AM41DL3238GB30IS	1Mb / 66P	32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
	AM41DL3238GB30IT	1Mb / 66P	32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
	AM41DL3238GB35IS	1Mb / 66P	32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
	AM41DL3238GB35IT	1Mb / 66P	32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
	AM41DL3238GB40IS	1Mb / 66P	32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM

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유사한 설명 - AM41DL3234GB70IS

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Advanced Micro Devices	AM41DL16X4D	980Kb / 63P	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
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	AM42DL16X4D	941Kb / 61P	Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM

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