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AM29PDL128G25PEE 데이터시트(PDF) 3 Page - Advanced Micro Devices

부품명 AM29PDL128G25PEE
상세설명  128 Megabit (8 M x 16-Bit/4 M x 32-Bit) CMOS 3.0 Volt-only, Simultaneous Read/ Write Flash Memory with VersatileIOTM Control
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제조업체  AMD [Advanced Micro Devices]
홈페이지  http://www.amd.com
Logo AMD - Advanced Micro Devices

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This Data Sheet states AMD’s current specifications regarding the Products described herein. This Data Sheet may
be revised by subsequent versions or modifications due to changes in technical specifications.
Publication# 25685
Rev: B Amendment/+4
Issue Date: October 28, 2004
Am29PDL128G
128 Megabit (8 M x 16-Bit/4 M x 32-Bit) CMOS 3.0 Volt-only, Simultaneous
Read/ Write Flash Memory with VersatileIOTM Control
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
128Mbit Page Mode device
— Word (16-bit) or double word (32-bit) mode selectable via
WORD# input
— Page size of 8 words/4 double words: Fast page read access
from random locations within the page
Single power supply operation
— Full Voltage range: 2.7 to 3.6 volt read, erase, and program
operations for battery-powered applications
Simultaneous Read/Write Operation
— Data can be continuously read from one bank while
executing erase/program functions in another bank
— Zero latency switching from write to read operations
FlexBank Architecture
— 4 separate banks, with up to two simultaneous operations
per device
— Organized as two 16 Mbit banks (Bank 1 & 4) and two 48
Mbit banks (Bank 2 & 3)
VersatileI/O
TM (V
IO) Control
— Output voltage generated and input voltages tolerated on the
device is determined by the voltage on the V
IO pin
SecSi (Secured Silicon) Sector region
— 128 words (64 double words) accessible through a
command sequence
Both top and bottom boot blocks in one device
Manufactured on 0.17 µm process technology
20-year data retention at 125°C
Minimum 1 million erase cycle guarantee per sector
PERFORMANCE CHARACTERISTICS
High Performance
— Page access times as fast as 25 ns
— Random access times as fast as 70 ns
Power consumption (typical values at 10 MHz)
— 38 mA active read current
— 17 mA program/erase current
— 1.5 µA typical standby mode current
SOFTWARE FEATURES
Software command-set compatible with JEDEC 42.4
standard
— Backward compatible with Am29F and Am29LV families
CFI (Common Flash Interface) complaint
— Provides device-specific information to the system, allowing
host software to easily reconfigure for different Flash devices
Erase Suspend / Erase Resume
— Suspends an erase operation to allow read or program
operations in other sectors of same bank
Unlock Bypass Program command
— Reduces overall programming time when issuing multiple
program command sequences
HARDWARE FEATURES
Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting program or erase
cycle completion
Hardware reset pin (RESET#)
— Hardware method to reset the device to reading array data
WP# (Write Protect) input
—At V
IL, protects the two top and two bottom sectors,
regardless of sector protect/unprotect status
—At V
IH, allows removal of sector protection
— An internal pull up to Vcc is provided
Persistent Sector Protection
— A command sector protection method to lock combinations
of individual sectors and sector groups to prevent program or
erase operations within that sector
— Sectors can be locked and unlocked in-system at V
CC level
Password Sector Protection
— A sophisticated sector protection method to lock
combinations of individual sectors and sector groups to
prevent program or erase operations within that sector using
a user-defined 64-bit password
ACC (Acceleration) input provides faster programming
times in a factory setting
Package options
— 80-ball Fortified BGA
Refer to AMD’s Website (www.amd.com) for the latest information.


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