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2N3393 데이터시트(PDF) 1 Page - Fairchild Semiconductor |
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2N3393 데이터시트(HTML) 1 Page - Fairchild Semiconductor |
1 / 7 page Discrete POWER & Signal Technologies NPN General Purpose Amplifier 2N3390 2N3391 2N3391A 2N3392 2N3393 This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V VCBO Collector-Base Voltage 25 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 500 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Symbol Characteristic Max Units 2N3390 / 3391/A / 3392 / 3393 PD Total Device Dissipation Derate above 25 °C 625 5.0 mW mW/ °C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 °C/W B C E TO-92 © 1997 Fairchild Semiconductor Corporation 3390-93, Rev B |
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