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Die Characteristics

DIE DIMENSIONS:

88 mils x 67 mils x 19 mils

±1 mils

2240

µm x 1710µm x 483µm ±25.4µm

INTERFACE MATERIALS:

Top Metallization:

Type: Al, 1% Cu

Thickness: 16k

Å

Glassivation:

Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.).

Silox Thickness: 12k

Å

Nitride Thickness: 3.5k

Å

Substrate: Potential (Powered Up)

Unbiased

ADDITIONAL INFORMATION:

Worst Case Current Density:

Transistor Count:

251

Process:

Bipolar Dielectric Isolation

Metallization Mask Layout

HS-2400RH

+IN3

D0

D1

ENABLE

GND

COMP

V+

OUT

V-

+IN2

-IN2

+IN1

-IN1

-IN4

+IN4

-IN3

HS-2400RH