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MTB10010U 데이터시트(PDF) 3 Page - NXP Semiconductors |
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3 / 12 page 1997 Feb 20 3 Philips Semiconductors Product specification NPN microwave power transistor MTB10010U LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Up to 0.3 mm from ceramic. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 40 V VCEO collector-emitter voltage open base − 15 V VCES collector-emitter voltage RBE =0 Ω− 40 V VEBO emitter-base voltage open collector − 3V IC collector current (average) − 0.75 A Ptot total power dissipation Tmb <75 °C; tp =1 µs; δ =1% − 36 W Tstg storage temperature −65 +200 °C Tj junction temperature − 200 °C Tsld soldering temperature t ≤ 10 s; note 1 − 235 °C Fig.2 Power derating curve. Ptot max = 36 W under the nominal pulse conditions. handbook, halfpage 50 –50 50 Ptot (W) 250 0 MGA037 150 10 20 30 40 0 100 200 Tmb ( oC) Fig.3 Load power as a function of input power. VCC = 24 V; tp =1 µs; δ = 1%; f = 1030 MHz. handbook, halfpage 0 12 8 4 0 0.5 PL (W) 12 MGA038 1.5 Pi (W) |
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