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IRF5210SPBF 데이터시트(Datasheet) 1 Page - International Rectifier

부품명 IRF5210SPBF
상세내용  HEXFET Power MOSFET
PDF  10 Pages
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제조사  IRF [International Rectifier]
홈페이지  http://www.irf.com
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IRF5210SPbF
IRF5210LPbF
HEXFET® Power MOSFET
PD - 97049A
VDSS = -100V
RDS(on) = 60mΩ
ID = -38A
l Advanced Process Technology
l Ultra Low On-Resistance
l 150°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Some Parameters are Different from
IRF5210S/L
l P-Channel
l Lead-Free
05/22/06
S
D
G
www.irf.com
1
Absolute Maximum Ratings
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ -10V
A
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V
IDM
Pulsed Drain Current
c
PD @TA = 25°C
Maximum Power Dissipation
W
PD @TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy
d
mJ
IAR
Avalanche Current
c
A
EAR
Repetitive Avalanche Energy
c
mJ
dv/dt
Peak Diode Recovery dv/dt
e
V/ns
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.75
°C/W
RθJA
Junction-to-Ambient (PCB Mount, steady state)
g
–––
40
170
1.3
± 20
0.017
120
-23
300 (1.6mm from case )
-55 to + 150
-7.4
Max.
-38
-24
-140
3.1
D2Pak
IRF5210SPbF
TO-262
IRF5210LPbF
S
D
G
D
S
D
G
D
GD
S
Gate
Drain
Source
Description
Features of this design are a 150°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating . These fea-
tures combine to make this design an extremely
efficient and reliable device for use in a wide
variety of other applications.




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