January 2004

2004 Fairchild Semiconductor Corporation

FDS4070N7 Rev B2 (W)

FDS4070N7

General Description

This

N-Channel

MOSFET

has

been

designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

“low side” synchronous rectifier operation, providing an

Applications

• Synchronous rectifier

• DC/DC converter

Features

• High performance trench technology for extremely

• High power and current handling capability

• Fast switching, low gate charge

• FLMP SO-8 package: Enhanced thermal

performance in industry-standard package size

4

3

2

1

5

6

7

8

Bottom-side

Drain Contact

Symbol

Parameter

Ratings

Units

Drain-Source Voltage

40

V

Gate-Source Voltage

± 20

V

Drain Current – Continuous

(Note 1a)

15.3

A

– Pulsed

60

Maximum Power Dissipation

(Note 1a)

3.0

W

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

40

°C/W

Thermal Resistance, Junction-to-Case

(Note 1)

0.5

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS4070N7

FDS4070N7

13’’

12mm

2500 units