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ISL9V5036S3S 데이터시트(PDF) 4 Page - Fairchild Semiconductor |
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ISL9V5036S3S 데이터시트(HTML) 4 Page - Fairchild Semiconductor |
4 / 8 page ©2004 Fairchild Semiconductor Corporation ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Rev. C3, October 2004 Figure 7. Collector to Emitter On-State Voltage vs Collector Current Figure 8. Transfer Characteristics Figure 9. DC Collector Current vs Case Temperature Figure 10. Threshold Voltage vs Junction Temperature Figure 11. Leakage Current vs Junction Temperature Figure 12. Switching Time vs Junction Temperature Typical Characteristics (Continued) VCE, COLLECTOR TO EMITTER VOLTAGE (V) 0 50 40 02.0 1.0 3.0 4.0 30 TJ = 175°C VGE = 4.0V VGE = 3.7V VGE = 4.5V VGE = 5.0V VGE = 8.0V 20 10 VGE, GATE TO EMITTER VOLTAGE (V) 2.0 1.0 3.0 4.0 50 40 30 0 2.5 1.5 3.5 4.5 PULSE DURATION = 250µs DUTY CYCLE < 0.5%, VCE = 5V TJ = 25°C TJ = 175°C TJ = -40°C 20 10 TC, CASE TEMPERATURE (°C) 50 25 175 125 75 50 100 150 40 30 20 10 0 VGE = 4.0V 175 50 100 2.0 1.8 1.6 1.4 1.0 TJ, JUNCTION TEMPERATURE (°C) 150 0 125 1.2 VCE = VGE ICE = 1mA -50 75 25 -25 TJ, JUNCTION TEMPERATURE (°C) 1000 10 0.1 10000 100 1 25 -25 175 125 75 -50 0 50 100 150 VECS = 24V VCES = 300V VCES = 250V 25 175 125 75 50 100 150 TJ, JUNCTION TEMPERATURE (°C) 20 16 12 6 2 ICE = 6.5A, VGE = 5V, RG = 1KΩ Resistive tOFF Inductive tOFF Resistive tON 10 14 18 8 4 |
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