ISL9V5036S3S datasheet(2/8 Pages) FAIRCHILD

부품명	ISL9V5036S3S

상세설명	EcoSPARKTM 500mJ, 360V, N-Channel Ignition IGBT

Download	8 Pages

Scroll/Zoom	100%

제조업체	FAIRCHILD [Fairchild Semiconductor]

홈페이지	http://www.fairchildsemi.com

Logo

2 / 8 page

ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Rev. C3, October 2004

Package Marking and Ordering Information

Electrical Characteristics T

A = 25°C unless otherwise noted

Off State Characteristics

On State Characteristics

Dynamic Characteristics

Switching Characteristics

Thermal Characteristics

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

V5036S

ISL9V5036S3ST

TO-263AB

330mm

24mm

800

V5036P

ISL9V5036P3

TO-220AA

Tube

N/A

50

V5036S

ISL9V5036S3

TO-262AA

Tube

N/A

50

V5036S

ISL9V5036S3S

TO-263AB

Tube

N/A

50

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

BVCER

Collector to Emitter Breakdown Voltage

IC = 2mA, VGE = 0,

RG = 1KΩ, See Fig. 15

TJ = -40 to 150°C

330

360

390

V

BVCES

Collector to Emitter Breakdown Voltage

IC = 10mA, VGE = 0,

RG = 0, See Fig. 15

TJ = -40 to 150°C

360

390

420

V

BVECS

Emitter to Collector Breakdown Voltage

IC = -75mA, VGE = 0V,

TC = 25°C

30

-

V

BVGES

Gate to Emitter Breakdown Voltage

IGES = ± 2mA

±12

±14

-

V

ICER

Collector to Emitter Leakage Current

VCER = 250V,

RG = 1KΩ,

See Fig. 11

TC = 25°C-

-

25

µA

TC = 150°C-

-

1

mA

IECS

Emitter to Collector Leakage Current

VEC = 24V, See

Fig. 11

TC = 25°C-

-

1

mA

TC = 150°C-

-

40

mA

R1

Series Gate Resistance

-

75

-

Ω

R2

Gate to Emitter Resistance

10K

-

30K

Ω

VCE(SAT)

Collector to Emitter Saturation Voltage

IC = 10A,

VGE = 4.0V

TC = 25°C,

See Fig. 4

-

1.17

1.60

V

VCE(SAT)

Collector to Emitter Saturation Voltage

IC = 15A,

VGE = 4.5V

TC = 150°C

-

1.50

1.80

V

QG(ON)

Gate Charge

IC = 10A, VCE = 12V,

VGE = 5V, See Fig. 14

-32

-

nC

VGE(TH)

Gate to Emitter Threshold Voltage

IC = 1.0mA,

VCE = VGE,

See Fig. 10

TC = 25°C1.3

-

2.2

V

TC = 150°C

0.75-

1.8V

VGEP

Gate to Emitter Plateau Voltage

IC = 10A,

VCE = 12V

-

3.0

-

V

td(ON)R

Current Turn-On Delay Time-Resistive

VCE = 14V, RL = 1Ω,

VGE = 5V, RG = 1KΩ

TJ = 25°C, See Fig. 12

-0.7

4

µs

trR

Current Rise Time-Resistive

-

2.1

7

µs

td(OFF)L

Current Turn-Off Delay Time-Inductive

VCE = 300V, L = 2mH,

VGE = 5V, RG = 1KΩ

TJ = 25°C, See Fig. 12

-

10.8

15

µs

tfL

Current Fall Time-Inductive

-

2.8

15

µs

SCIS

Self Clamped Inductive Switching

TJ = 25°C, L = 670 µH,

RG = 1KΩ, VGE = 5V, See

Fig. 1 & 2

-

500

mJ

RθJC

Thermal Resistance Junction-Case

TO-263, TO-220, TO-262

-

0.6

°C/W

유사한 부품 번호 - ISL9V5036S3S

제조업체	부품명	데이터시트	상세설명
Fairchild Semiconductor	ISL9V5036S3S	206Kb / 8P	EcoSPARKTM 500mJ, 360V, N-Channel Ignition IGBT
Fairchild Semiconductor	ISL9V5036S3ST	174Kb / 8P	EcoSPARK 500mJ, 360V, N-Channel Ignition IGBT

More results

유사한 설명 - ISL9V5036S3S

제조업체	부품명	데이터시트	상세설명
Fairchild Semiconductor	ISL9V5036S3S	206Kb / 8P	EcoSPARKTM 500mJ, 360V, N-Channel Ignition IGBT
	ISL9V5036P3	354Kb / 7P	EcoSPARK 500mJ, 360V, N-Channel Ignition IGBT
	ISL9V3036D3S	170Kb / 8P	EcoSPARKTM 300mJ, 360V, N-Channel Ignition IGBT
	ISL9V5036S3ST	174Kb / 8P	EcoSPARK 500mJ, 360V, N-Channel Ignition IGBT
	ISL9V3036D3S	200Kb / 8P	EcoSPARKTM 300mJ, 360V, N-Channel Ignition IGBT
ON Semiconductor	FGD2736G3-F085	932Kb / 9P	EcoSPARKTM 3 270mJ, 360V, N-Channel Ignition IGBT August-2017, Rev. 2
Fairchild Semiconductor	FGB3236	583Kb / 10P	FGB3236_F085 / FGI3236_F085 EcoSPARKTM 320mJ, 360V, N-Channel Ignition IGBT
	ISL9V5036P3_F085	361Kb / 8P	ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 EcoSPARK 500mJ, 360V, N-Channel Ignition IGBT
	ISL9V2040D3S	165Kb / 8P	EcoSPARKTM 200mJ, 400V, N-Channel Ignition IGBT
	ISL9V2040D3S	195Kb / 8P	EcoSPARKTM 200mJ, 400V, N-Channel Ignition IGBT

More results

ISL9V5036S3S 데이터시트(PDF) 2 Page - Fairchild Semiconductor

ISL9V5036S3S 데이터시트(HTML) 2 Page - Fairchild Semiconductor

유사한 부품 번호 - ISL9V5036S3S

유사한 설명 - ISL9V5036S3S

Html Pages

1 2 3 4 5 6 7 8

데이터시트 다운로드

링크 URL