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BCP54-16 데이터시트(PDF) 9 Page - NXP Semiconductors |
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BCP54-16 데이터시트(HTML) 9 Page - NXP Semiconductors |
9 / 15 page BC635_BCP54_BCX54_7 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 07 — 4 June 2007 9 of 15 NXP Semiconductors BC635; BCP54; BCX54 45 V, 1 A NPN medium power transistors 7. Characteristics [1] Pulse test: tp ≤ 300 µs; δ = 0.02. FR4 PCB, mounting pad for collector 6 cm2 Fig 9. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89; typical values 006aaa816 10 1 102 103 Zth(j-a) (K/W) 10−1 10−5 10 10−2 10−4 102 10−1 tp (s) 10−3 103 1 duty cycle = 0.01 0 0.02 0.05 0.1 0.2 0.33 0.5 0.75 1.0 Table 8. Characteristics Tamb =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB =30V; IE = 0 A - - 100 nA VCB =30V; IE =0A; Tj = 150 °C --10 µA IEBO emitter-base cut-off current VEB =5V; IC = 0 A - - 100 nA hFE DC current gain VCE =2V IC = 5 mA 63 - - IC = 150 mA 63 - 250 IC = 500 mA [1] 40 - - DC current gain VCE =2V hFE selection -10 IC = 150 mA 63 - 160 hFE selection -16 IC = 150 mA 100 - 250 VCEsat collector-emitter saturation voltage IC = 500 mA; IB =50mA [1] - - 500 mV VBE base-emitter voltage VCE =2V; IC = 500 mA [1] --1 V Cc collector capacitance VCB =10V; IE =ie =0A; f=1MHz -6 -pF fT transition frequency VCE =5V; IC =50mA; f = 100 MHz 100 180 - MHz |
유사한 부품 번호 - BCP54-16 |
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유사한 설명 - BCP54-16 |
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