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TSHG6200 데이터시트(PDF) 1 Page - Vishay Siliconix

부품명 TSHG6200
상세설명  High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
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TSHG6200
Document Number 81078
Rev. 1.5, 28-Nov-06
Vishay Semiconductors
www.vishay.com
1
94 8390
High Speed Infrared Emitting Diode, 850 nm,
GaAlAs Double Hetero
Description
TSHG6200 is a high speed infrared emitting diode in
GaAlAs double hetero (DH) technology, molded in a
clear, untinted plastic package.
The new technology combines high speed with high
radiant power at wavelength of 850 nm.
Features
• High modulation bandwidth
• Extra high radiant power and radiant
intensity
• Low forward voltage
• Suitable for high pulse current operation
• Standard package T-1¾ (
∅ 5 mm)
• Angle of half intensity
ϕ = ± 10°
• Peak wavelength
λ
p = 850 nm
• High reliability
• Good spectral matching to Si photodetectors
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
• Infrared radiation source for CMOS cameras
(illumination). High speed IR data transmission.
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
e2
Part
Remarks
TSHG6200
MOQ: 4000 pc
Parameter
Test condition
Symbol
Value
Unit
Reverse voltage
VR
5V
Forward current
IF
100
mA
Peak forward current
tp/T = 0.5, tp = 100 µs
IFM
200
mA
Surge forward current
tp = 100 µs
IFSM
1A
Power dissipation
PV
250
mW
Junction temperature
Tj
100
°C
Operating temperature range
Tamb
- 40 to + 85
°C
Storage temperature range
Tstg
- 40 to + 100
°C
Soldering temperature
t
≤ 5 sec, 2 mm from case
Tsd
260
°C
Thermal resistance junction/
ambient
RthJA
300
K/W


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