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IRL3215PBF 데이터시트(PDF) 2 Page - International Rectifier

부품명 IRL3215PBF
상세설명  HEXFET Power MOSFET
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRL3215PBF 데이터시트(HTML) 2 Page - International Rectifier

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IRL3215PbF
2
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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ƒ ISD ≤ 7.2A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Notes:
‚ Starting TJ = 25°C, L = 4.9mH
RG = 25Ω, IAS = 7.2A. (See Figure 12)
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
––– –––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

––– –––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C, IS = 7.2A, VGS = 0V
„
trr
Reverse Recovery Time
–––
160
240
ns
TJ = 25°C, IF = 7.2A
Qrr
Reverse RecoveryCharge
–––
810 1210
nC
di/dt = 100A/µs
„
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
12
…
48
A
… Caculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
150
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.20 –––
V/°C Reference to 25°C, ID = 1mA
–––
––– 0.166
VGS = 10V, ID = 7.2A
„
–––
––– 0.184
VGS = 5.0V, ID = 7.2A
„
–––
––– 0.208
VGS = 4.0V, ID = 6A
„
VGS(th)
Gate Threshold Voltage
1.0
–––
2.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
8.3
–––
–––
S
VDS = 25V, ID = 7.2A
‡
–––
–––
25
µA
VDS = 150V, VGS = 0V
–––
–––
250
VDS = 120V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
nA
VGS = 16V
Gate-to-Source Reverse Leakage
–––
––– -100
VGS = -16V
Qg
Total Gate Charge
–––
–––
35
ID = 7.2A
Qgs
Gate-to-Source Charge
–––
–––
4.1
nC
VDS = 120V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
21
VGS = 5.0V, See Fig. 6 and 13
„‡
td(on)
Turn-On Delay Time
–––
7.4
–––
VDD = 75V
tr
Rise Time
–––
45
–––
ns
ID = 7.2A
td(off)
Turn-Off Delay Time
–––
38
–––
RG = 12Ω, VGS = 5.0V
tf
Fall Time
–––
36
–––
RD = 10.2Ω, See Fig. 10
„‡
Between lead,
6mm (0.25in.)
from package
and center of die contact
†
Ciss
Input Capacitance
–––
775
–––
VGS = 0V
Coss
Output Capacitance
–––
140
–––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
70
–––
ƒ = 1.0MHz, See Fig. 5
‡
nH
IGSS
S
D
G
LS
InternalSourceInductance
–––
7.5
–––
RDS(on)
StaticDrain-to-SourceOn-Resistance
LD
InternalDrainInductance
–––
4.5
–––
IDSS
Drain-to-SourceLeakageCurrent


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