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2SJ628 데이터시트(PDF) 1 Page - Sanyo Semicon Device

부품명 2SJ628
상세설명  Ultrahigh-Speed Switching Applications
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제조업체  SANYO [Sanyo Semicon Device]
홈페이지  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

2SJ628 데이터시트(HTML) 1 Page - Sanyo Semicon Device

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2SJ628
No.7271-1/4
Features
Low ON-resistance.
Ultrahigh-speed switching.
1.8V drive.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--12
V
Gate-to-Source Voltage
VGSS
±8V
Drain Current (DC)
ID
--2.5
A
Drain Current (Pulse)
IDP
PW
≤10µs, duty cycle≤1%
--10
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (250mm2!0.8mm)
1.0
W
Tc=25
°C
3.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0
--12
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--12V, VGS=0
--10
µA
Gate-to-Source Leakage Current
IGSS
VGS=±6.4V, VDS=0
±10
µA
Cutoff Voltage
VGS(off)
VDS=--6V, ID=--1mA
--0.3
--1.0
V
Forward Transfer Admittance
yfs
VDS=--6V, ID=--1.3A
2.1
3.0
S
RDS(on)1
ID=--1.3A, VGS=--4.5V
120
155
m
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=--0.7A, VGS=--2.5V
170
240
m
RDS(on)3
ID=--0.2A, VGS=--1.8V
230
360
m
Marking : MB
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7271
2SJ628
Package Dimensions
unit : mm
2062A
[2SJ628]
72502 TS IM TA-100054
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
1 : Gate
2 : Drain
3 : Source
SANYO : PCP
4.5
1.6
0.5
0.4
1.5
3.0
1.5
0.4
0.75
3
2
1
(Bottom view)
Preliminary


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