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PHN210 데이터시트(PDF) 3 Page - NXP Semiconductors |
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PHN210 데이터시트(HTML) 3 Page - NXP Semiconductors |
3 / 7 page Philips Semiconductors Product specification Dual N-channel enhancement mode PHN210 TrenchMOS TM transistor REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS T j = 25˚C, per MOSFET unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I S Continuous source diode T a = 25 ˚C - - 2.2 A current (per MOSFET) I SM Pulsed source diode current - - 14 A (per MOSFET) V SD Diode forward voltage I F = 1.25 A; VGS = 0 V - 0.82 1.2 V t rr Reverse recovery time I F = 1.25 A; -dIF/dt = 100 A/µs; - 69 - ns Q rr Reverse recovery charge V GS = 0 V; VR = 25 V - 55 - nC Fig.1. Normalised power dissipation. PD% = 100 ⋅P D/PD 25 ˚C = f(Ta) Fig.2. Normalised continuous drain current. ID% = 100 ⋅I D/ID 25 ˚C = f(Ta); conditions: VGS ≥ 10 V Fig.3. Safe operating area. T a = 25 ˚C I D & IDM = f(VDS); IDM single pulse; parameter tp Fig.4. Transient thermal impedance. Z th j-a = f(t); parameter D = tp/T 0 20 40 60 80 100 120 140 Tamb / C PD% Normalised Power Derating 120 110 100 90 80 70 60 50 40 30 20 10 0 PHN210 0.01 0.1 1 10 100 0.1 1 10 100 Drain-Source Voltage, VDS (V) Peak Pulsed Drain Current, IDM (A) 10 s 100 ms 10 ms RDS(on) = VDS/ ID 1 ms tp = 10 us 100 us 0 20 40 60 80 100 120 140 Ambient temperature, Tamb (C) ID% Normalised Current Derating 120 110 100 90 80 70 60 50 40 30 20 10 0 PHN210 0.01 0.1 1 10 100 1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01 Pulse width, tp (s) Peak Pulsed Drain Current, IDM (A) single pulse D = 0.5 0.2 0.1 0.05 0.02 tp D = tp/T D P T February 1999 3 Rev 1.000 |
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