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MASWSS0091 데이터시트(PDF) 2 Page - Tyco Electronics

부품명 MASWSS0091
상세설명  GaAs SP6T 2.5 V High Power Switch Dual / Tri / Quad-Band GSM Applications
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제조업체  MACOM [Tyco Electronics]
홈페이지  http://www.macom.com
Logo MACOM - Tyco Electronics

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GaAs SP6T 2.5 V High Power Switch
Dual / Tri / Quad-Band GSM Applications
MASWSS0091
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
V6
2
Electrical Specifications: TA = 25°C, Vc = 0V/2.5V, Z0 = 50 Ohms
2
Parameter
Test Conditions
Units
Min.
Typ.
Max.
Tx Insertion Loss3
0.5 - 1 GHz
1 - 2 GHz
dB
dB
0.5
0.65
0.7
0.9
Rx Insertion Loss3
0.5 - 1 GHz
1 - 2 GHz
dB
dB
1.0
1.3
1.2
1.6
Tx to Rx Isolation
0.5 - 1 GHz
1 - 2 GHz
dB
dB
40
45
38
Tx to Tx Isolation
0.5 - 1 GHz
1 - 2 GHz
dB
dB
22
26
17
Return Loss
0.5 - 2.5 GHz
dB
20
Tx P0.1dB
1 GHz
dBm
41
Rx P1dB
1 GHz
dBm
25
2nd Harmonic
1 GHz, PIN = +35 dBm, 100% Duty Cycle
dBc
-78
-67
3rd Harmonic
1 GHz, PIN = +35 dBm, 100% Duty Cycle
dBc
-72
-67
Trise, Tfall
10% to 90% RF, 90% to 10% RF
µS
0.2
Ton, Toff
50% control to 90% RF,
and 50% control to 10% RF
µS
0.2
Transients
In Band
mV
70
Control Current
µA
20
80
2. External DC blocking capacitors are required on all RF ports.
3. Insertion loss can be optimized by varying the DC blocking capacitor value, e.g. 100 pF for 0.5 GHz - 2.0 GHz.
Qualification
Qualified to M/A-COM specification REL-201,
Process Flow –2.
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive
to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control
techniques should be used when handling these
devices.
Functional Schematic
Tx1
Tx2
VTx1
VTx2
ANT
VRxC
VRx1
Rx1
VRx2
Rx2
Rx3
Rx4
VRx3
VRx4
100pF
100pF
100pF
100pF
100pF
100pF
100pF
GND
GND


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