SYMBOLS

CHARACTERISTICS

UNITS MIN TYP MAX

Drain to Source Voltage

V

2

3

Drain Current

mA

10

20

Input Power

dBm

0

FEATURES

• SUPER LOW NOISE FIGURE:

0.45 dB TYP at 12 GHz

• HIGH ASSOCIATED GAIN:

12.5 dB TYP at 12 GHz

• GATE LENGTH: ≤ 0.20 µm

• GATE WIDTH: 200 µm

• LOW COST PLASTIC PACKAGE

C to KU BAND SUPER LOW

NOISE AMPLIFIER N-CHANNEL HJ-FET

NE325S01

PART NUMBER

NE325S01

PACKAGE OUTLINE

S01

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

dB

0.45

0.55

dB

11.0

12.5

mA

20

60

90

mS

45

60

-0.2

-0.7

-2.0

µA

0.5

10

NOISE FIGURE & ASSOCIATED

GAIN vs. FREQUENCY

Frequency, f (GHz)

California Eastern Laboratories

RECOMMENDED

Note:

1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually

measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line

as a "go-no-go" screening tuned for the "generic" type but not each specimen.

1.0

0.5

0

12

4

6

8 10

14

20

30

4

8

12

16

20

24

Ga

NF

DESCRIPTION

The NE325S01 is a Hetero-Junction FET that uses the junction

between Si-doped AlGaAs and undoped InGaAs to create very

high mobility electrons. Its excellent low noise figure and high

associated gain make it suitable for commercial systems and

industrial applications.

NEC's stringent quality assurance and test procedures assure

the highest reliability and performance.