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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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NE3210S01-T1 데이터시트(PDF) 3 Page - California Eastern Labs |
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NE3210S01-T1 데이터시트(HTML) 3 Page - California Eastern Labs |
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3 / 7 page  NE3210S01 TYPICAL PERFORMANCE CURVES (TA= 25°C) DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE Gate to Source Voltage, VGS (V) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Drain to Source Voltage, VDS (V) 60 50 40 30 20 10 0 100 85 70 45 30 15 0 -1.20 -1.0 -0.8 -0.6 -0.4 -0.2 0 VDS =2V 60 50 40 30 20 10 0 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 VGS = 0 V -0.18 V -0.27 V -0.36 V -0.45 V -0.54 V -0.63 V -0.09 V TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 250 200 150 100 50 0 50 100 150 200 250 VDS = 2 V ID = 10 mA 12 16 20 24 8 4 1 2 4 6 8 10 14 20 30 MAG. MSG. |S21S| 2 Ambient Temperature, TA (°C) Frequency, f (GHz) Frequency, f (GHz) NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V ID = 10 mA GA NF 1.0 0.5 0 1 2 4 6 8 10 14 20 30 24 20 16 12 8 4 Drain Current, ID (mA) NOISE FIGURE and ASSOCIATED GAIN vs. DRAIN CURRENT VDS = 2 V f = 12 GHz GA NF 1.5 2.0 1.0 0.5 0 10 20 30 14 15 13 12 11 MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY |
유사한 부품 번호 - NE3210S01-T1 |
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유사한 설명 - NE3210S01-T1 |
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