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PZT2222A 데이터시트(PDF) 3 Page - NXP Semiconductors |
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3 / 8 page 1999 Apr 14 3 Philips Semiconductors Product specification NPN switching transistor PZT2222A THERMAL CHARACTERISTICS Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”. CHARACTERISTICS Tj =25 °C unless otherwise specified. Note 1. Pulse test: tp ≤ 300 µs; δ≤ 0.02. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 109 K/W Rth j-s thermal resistance from junction to soldering point 28 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB =60V − 10 nA IE = 0; VCB =60V; Tamb = 125 °C − 10 µA IEBO emitter cut-off current IC = 0; VEB =5V − 10 nA hFE DC current gain IC = 0.1 mA; VCE =10V 35 − IC = 1 mA; VCE =10V 50 − IC = 10 mA; VCE =10V 75 − IC = 10 mA; VCE =10V; Tamb = −55 °C 35 − IC = 150 mA; VCE = 1 V; note 1 50 − IC = 150 mA; VCE = 10 V; note 1 100 300 IC = 500 mA; VCE = 10 V; note 1 40 − VCEsat collector-emitter saturation voltage IC = 150 mA; IB =15mA − 300 mV IC = 500 mA; IB =50mA − 1V VBEsat base-emitter saturation voltage IC = 150 mA; IB = 15 mA 0.6 1.2 V IC = 500 mA; IB =50mA − 2V Cc collector capacitance IE =ie = 0; VCB = 10 V; f = 1 MHz − 8pF Ce emitter capacitance IC =ic = 0; VEB = 500 mV; f = 1 MHz − 25 pF fT transition frequency IC = 20 mA; VCE = 20 V; f = 100 MHz 300 − MHz Switching times (between 10% and 90% levels); (see Fig.2) ton turn-on time ICon = 150 mA; IBon = 15 mA; IBoff = −15 mA; Tamb =25 °C − 35 ns td delay time − 10 ns tr rise time − 25 ns toff turn-off time − 250 ns ts storage time − 200 ns tf fall time − 60 ns |
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