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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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BAP64-06W 데이터시트(PDF) 3 Page - NXP Semiconductors |
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BAP64-06W 데이터시트(HTML) 3 Page - NXP Semiconductors |
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3 / 8 page  2001 Apr 17 3 Philips Semiconductors Product specification Silicon PIN diode BAP64-06W ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Per diode VF forward voltage IF = 50 mA 0.95 1.1 V IR reverse current VR = 100 V − 10 µA VR =20V − 1 µA Cd diode capacitance VR = 0; f = 1 MHz 0.52 − pF VR = 1 V; f = 1 MHz 0.37 − pF VR = 20 V; f = 1 MHz 0.23 0.35 pF rD diode forward resistance IF = 0.5 mA; f = 100 MHz; note 1 20 40 Ω IF = 1 mA; f = 100 MHz; note 1 10 20 Ω IF = 10 mA; f = 100 MHz; note 1 2 3.8 Ω IF = 100 mA; f = 100 MHz; note 1 0.7 1.35 Ω |s 21| 2 isolation VR = 0; f = 900 MHz 18.5 − dB VR = 0; f = 1800 MHz 13.5 − dB VR = 0; f = 2450 MHz 10.9 − dB |s 21| 2 insertion loss IF = 0.5 mA; f = 900 MHz 1.86 − dB IF = 0.5 mA; f = 1800 MHz 2.06 − dB IF = 0.5 mA; f = 2450 MHz 2.23 − dB |s 21| 2 insertion loss IF = 1 mA; f = 900 MHz 1.01 − dB IF = 1 mA; f = 1800 MHz 1.06 − dB IF = 1 mA; f = 2450 MHz 1.10 − dB |s 21| 2 insertion loss IF = 10 mA; f = 900 MHz 0.19 − dB IF = 10 mA; f = 1800 MHz 0.21 − dB IF = 10 mA; f = 2450 MHz 0.27 − dB |s 21| 2 insertion loss IF = 100 mA; f = 900 MHz 0.08 − dB IF = 100 mA; f = 1800 MHz 0.10 − dB IF = 100 mA; f = 2450 MHz 0.16 − dB τL charge carrier life time when switched from IF = 10 mA to IR = 6 mA; RL = 100 Ω; measured at IR =3mA 1.55 −µs LS series inductance IF = 100 mA; f = 100 MHz 1.6 − nH SYMBOL PARAMETER VALUE UNIT Rth j-s thermal resistance from junction to soldering point 250 K/W |
유사한 부품 번호 - BAP64-06W |
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유사한 설명 - BAP64-06W |
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