전자부품 데이터시트 검색엔진 |
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SA1920 데이터시트(PDF) 10 Page - NXP Semiconductors |
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SA1920 데이터시트(HTML) 10 Page - NXP Semiconductors |
10 / 36 page Philips Semiconductors Product specification SA1920 Dual-band RF front-end 1999 Mar 02 10 Frequency Doubler PARAMETERS MIN –3 s TYP. +3 s MAX UNITS NOTES Output Frequency Range 1905 2115 MHz Output Power –9 dBm Differential Output Impedance 100 W Harmonic Content (3F, 4F, etc.) –20 dBc Subharmonic Content (Fi) –20 dBc Non-Harmonic Content 80 dBc Turn On/Off Time 30 msec Phase Noise Degradation, ∆ f = 30kHz 6 dB Transmit Mixer PARAMETERS MIN –3 s TYP. +3 s MAX UNITS NOTES TX Mixer Input Frequency 824 1910 MHz TX RF Input Impedance, Balanced 200 W TX Mixer Output Frequency 70 200 MHz TX IF Load Impedance 1000 W Maximum TX IF Load Capacitance 2 pF Conversion Power Gain 15 16 17 dB 2 1 dB Input Compression Point –17 dBm IIP2 20 dBm IIP3 –9 –7 –5 dBm Noise Figure (double sideband) 7.5 dB Reverse Isolation TXIN–LOIN 40 dB Isolation LOIN–TXIN 40 dB NOTES: 1. External matching network is required. 2. From 200 W input to a 1kW output. |
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