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SI4800 데이터시트(PDF) 8 Page - NXP Semiconductors |
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SI4800 데이터시트(HTML) 8 Page - NXP Semiconductors |
8 / 13 page Philips Semiconductors Si4800 N-channel enhancement mode field-effect transistor Product data Rev. 01 — 13 July 2001 8 of 13 9397 750 08412 © Philips Electronics N.V. 2001. All rights reserved. Tj =25 °C and 150 °C; VGS =0V ID = 9 A; VDD =15V Fig 12. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 13. Gate-source voltage as a function of gate charge; typical values. 03af88 0 10 20 30 40 0 0.4 0.8 1.2 VSD (V) IS (A) Tj = 25 ºC 150 ºC VGS = 0 V 03af90 0 2 4 6 8 10 0 1020 3040 QG (nC) VGS (V) ID = 9 A Tj = 25 ºC VDD = 15 V |
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