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SI4410DY 데이터시트(PDF) 4 Page - International Rectifier

부품명 SI4410DY
상세설명  HEXFET Power MOSFET
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

SI4410DY 데이터시트(HTML) 4 Page - International Rectifier

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Si4410DY
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
,Source-to-Drain Voltage (V)
SD
V
= 0 V
GS
T = 25 C
J
°
T = 150 C
J
°
1
10
100
1000
0.1
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
C
V
, Drain-to-Source Voltage (V)
DS
10us
100us
1ms
10ms
0
10
20
30
40
50
0
4
8
12
16
20
Q , Total Gate Charge (nC)
G
I =
D
10A
V
= 15V
DS
V
= 24V
DS
1
10
100
0
400
800
1200
1600
2000
2400
V
, Drain-to-Source Voltage (V)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C
SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
Ciss
Coss
Crss


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