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SST29EE512-70-4I-EH 데이터시트(PDF) 9 Page - Silicon Storage Technology, Inc |
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SST29EE512-70-4I-EH 데이터시트(HTML) 9 Page - Silicon Storage Technology, Inc |
9 / 26 page Data Sheet 512 Kbit Page-Write EEPROM SST29EE512 9 ©2005 Silicon Storage Technology, Inc. S71060-09-000 9/05 TABLE 6: RECOMMENDED SYSTEM POWER-UP TIMINGS Symbol Parameter Minimum Units TPU-READ1 Power-up to Read Operation 100 µs TPU-WRITE1 Power-up to Write Operation 5 ms T6.0 1060 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. TABLE 7: CAPACITANCE (TA = 25°C, f=1 Mhz, other pins open) Parameter Description Test Condition Maximum CI/O1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. I/O Pin Capacitance VI/O = 0V 12 pF CIN1 Input Capacitance VIN = 0V 6 pF T7.0 1060 TABLE 8: RELIABILITY CHARACTERISTICS Symbol Parameter Minimum Specification Units Test Method NEND1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. Endurance 10,000 Cycles JEDEC Standard A117 TDR1 Data Retention 100 Years JEDEC Standard A103 ILTH1 Latch Up 100 mA JEDEC Standard 78 T8.5 1060 |
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