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SST27SF010-70-3C-WH 데이터시트(PDF) 1 Page - Silicon Storage Technology, Inc |
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SST27SF010-70-3C-WH 데이터시트(HTML) 1 Page - Silicon Storage Technology, Inc |
1 / 23 page ©2005 Silicon Storage Technology, Inc. S71152-11-000 9/05 1 The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. MTP is a trademark of Silicon Storage Technology, Inc. These specifications are subject to change without notice. Data Sheet 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash SST27SF512 / SST27SF010 / SST27SF020 FEATURES: • Organized as 64K x8 / 128K x8 / 256K x8 • 4.5-5.5V Read Operation • Superior Reliability – Endurance: At least 1000 Cycles – Greater than 100 years Data Retention • Low Power Consumption – Active Current: 20 mA (typical) – Standby Current: 10 µA (typical) • Fast Read Access Time – 70 ns • Fast Byte-Program Operation – Byte-Program Time: 20 µs (typical) – Chip Program Time: 1.4 seconds (typical) for SST27SF512 2.8 seconds (typical) for SST27SF010 5.6 seconds (typical) for SST27SF020 • Electrical Erase Using Programmer – Does not require UV source – Chip-Erase Time: 100 ms (typical) • TTL I/O Compatibility • JEDEC Standard Byte-wide EPROM Pinouts • Packages Available – 32-lead PLCC – 32-lead TSOP (8mm x 14mm) – 28-pin PDIP for SST27SF512 – 32-pin PDIP for SST27SF010/020 • All non-Pb (lead-free) devices are RoHS compliant PRODUCT DESCRIPTION The SST27SF512/010/020 are a 64K x8 / 128K x8 / 256K x8 CMOS, Many-Time Programmable (MTP) low cost flash, manufactured with SST’s proprietary, high perfor- mance SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. These MTP devices can be electrically erased and pro- grammed at least 1000 times using an external program- mer with a 12V power supply. They have to be erased prior to programming. These devices conform to JEDEC stan- dard pinouts for byte-wide memories. Featuring high-performance Byte-Program, the SST27SF512/010/020 provide a Byte-Program time of 20 µs. Designed, manufactured, and tested for a wide spec- trum of applications, these devices are offered with an endurance of at least 1000 cycles. Data retention is rated at greater than 100 years. The SST27SF512/010/020 are suited for applications that require infrequent writes and low power nonvolatile stor- age. These devices will improve flexibility, efficiency, and performance while matching the low cost in nonvolatile applications that currently use UV-EPROMs, OTPs, and mask ROMs. To meet surface mount and conventional through hole requirements, the SST27SF512 are offered in 32-lead PLCC, 32-lead TSOP, and 28-pin PDIP packages. The SST27SF010/020 are offered in 32-pin PDIP, 32-lead PLCC, and 32-lead TSOP packages. See Figures 1, 2, and 3 for pin assignments. Device Operation The SST27SF512/010/020 are a low cost flash solution that can be used to replace existing UV-EPROM, OTP, and mask ROM sockets. These devices are functionally (read and program) and pin compatible with industry standard EPROM products. In addition to EPROM func- tionality, these devices also support electrical Erase operation via an external programmer. They do not require a UV source to erase, and therefore the pack- ages do not have a window. Read The Read operation of the SST27SF512/010/020 is con- trolled by CE# and OE#. Both CE# and OE# have to be low for the system to obtain data from the outputs. Once the address is stable, the address access time is equal to the delay from CE# to output (TCE). Data is available at the out- put after a delay of TOE from the falling edge of OE#, assuming that CE# pin has been low and the addresses have been stable for at least TCE-TOE. When the CE# pin is high, the chip is deselected and a typical standby current of 10 µA is consumed. OE# is the output control and is used to gate data from the output pins. The data bus is in high impedance state when either CE# or OE# is high. SST27SF512 / 010 / 0205.0V-Read 512Kb / 1Mb / 2Mb (x8) MTP flash memories |
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